Presentation 2005/10/7
Simulation of Phase Separation in InAlBN
Takeshi KIMURA, Takashi MATSUOKA,
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Abstract(in English) InGaAlBN, which makes possible to widely select the band-gap energy under the condition of the same lattice constants between each layer in deep UV and infrared optical devices, is proposed. In particular, the miscibility of InAlBN crystal with the largest possibility in the above sense is theoretically investigated. For the calculation, the strictly-regular-solution approximation is used. The interaction parameters used in this model are estimated by using delta-lattice-parameter method. As a result, InAlBN is found to be miscible near InN, AlN, and BN.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InAlBN / InN / BN / Phase Separation / Lattice Matching
Paper # ED2005-139,CPM2005-126,LQE005-66
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Committee LQE
Conference Date 2005/10/7(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Simulation of Phase Separation in InAlBN
Sub Title (in English)
Keyword(1) InAlBN
Keyword(2) InN
Keyword(3) BN
Keyword(4) Phase Separation
Keyword(5) Lattice Matching
1st Author's Name Takeshi KIMURA
1st Author's Affiliation Institute for Materials Research, Tohoku University()
2nd Author's Name Takashi MATSUOKA
2nd Author's Affiliation Institute for Materials Research, Tohoku University
Date 2005/10/7
Paper # ED2005-139,CPM2005-126,LQE005-66
Volume (vol) vol.105
Number (no) 330
Page pp.pp.-
#Pages 4
Date of Issue