| Presentation | 2005-10-20 A 333MHz Random Cycle DRAM Using the Floating Body Cell Kosuke HATSUDA, Katsuyuki FUJITA, Takashi OHSAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A Monte Carlo simulation shows that a DRAM using the floating body cell (FBC) realizes a 333MHz high-speed random cycle with an introduction of a symmetrical sense amplifier circuit and an optimization of its current mirror ratio. Since the FBC DRAM having a superior affinity with logic LSI process is also shown to have its macro size smaller than the conventional 1T-1C DRAM, the FBC is a promising candidate for next generation embedded DRAM cells. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI / Capacitor-less DRAM / FBC / Gain Cell / Embedded Memory |
| Paper # | SIP2005-114,ICD2005-133,IE2005-78 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2005/10/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 333MHz Random Cycle DRAM Using the Floating Body Cell |
| Sub Title (in English) | |
| Keyword(1) | SOI |
| Keyword(2) | Capacitor-less DRAM |
| Keyword(3) | FBC |
| Keyword(4) | Gain Cell |
| Keyword(5) | Embedded Memory |
| 1st Author's Name | Kosuke HATSUDA |
| 1st Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company() |
| 2nd Author's Name | Katsuyuki FUJITA |
| 2nd Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| 3rd Author's Name | Takashi OHSAWA |
| 3rd Author's Affiliation | SoC Research and Development Center, Toshiba Corp. Semiconductor Company |
| Date | 2005-10-20 |
| Paper # | SIP2005-114,ICD2005-133,IE2005-78 |
| Volume (vol) | vol.105 |
| Number (no) | 351 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |