| Presentation | 2005-10-20 A 2.0μm Pixel Pitch MOS Image Sensor with an Amorphous Si Film Color Filter Masahiro KASANO, Yuuichi INABA, Mitsuyoshi MORI, Shigetaka KASUGA, Takahiko MURATA, Takumi YAMAGUCHI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed a 2.0×2.0μm^2 pixel size MOS image sensor with a high aperture ratio of 30%. The key technologies are a newly developed pixel circuit configuration that shares an amplifying circuit among four pixels, a fine design rule of 0.15um and a thin color filter made up of amorphous silicon. In the new pixel circuit configuration, the unit pixel has 1.5 transistors. The design rule of 0.15μm enables reduction of wiring area by 40%. The newly developed color filter achieves a thickness of 1/10 of that of the conventional organic pigment color filter giving rise to high light collection efficiency. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOS image sensor / pixel configuration / driving method / color filter / amorphous silicon |
| Paper # | SIP2005-105,ICD2005-124,IE2005-69 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2005/10/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 2.0μm Pixel Pitch MOS Image Sensor with an Amorphous Si Film Color Filter |
| Sub Title (in English) | |
| Keyword(1) | MOS image sensor |
| Keyword(2) | pixel configuration |
| Keyword(3) | driving method |
| Keyword(4) | color filter |
| Keyword(5) | amorphous silicon |
| 1st Author's Name | Masahiro KASANO |
| 1st Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company Matsushita Electric Industrial Co., Ltd() |
| 2nd Author's Name | Yuuichi INABA |
| 2nd Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company Matsushita Electric Industrial Co., Ltd |
| 3rd Author's Name | Mitsuyoshi MORI |
| 3rd Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company Matsushita Electric Industrial Co., Ltd |
| 4th Author's Name | Shigetaka KASUGA |
| 4th Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company Matsushita Electric Industrial Co., Ltd |
| 5th Author's Name | Takahiko MURATA |
| 5th Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company Matsushita Electric Industrial Co., Ltd |
| 6th Author's Name | Takumi YAMAGUCHI |
| 6th Author's Affiliation | Semiconductor Devices Research Center, Semiconductor Company Matsushita Electric Industrial Co., Ltd |
| Date | 2005-10-20 |
| Paper # | SIP2005-105,ICD2005-124,IE2005-69 |
| Volume (vol) | vol.105 |
| Number (no) | 351 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |