| Presentation | 2002/6/28 Highly reliable and high-power operation of 1050 nm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes F. Akinaga, T. Kuniyasu, F. Yamanaka, K. Matsumoto, T. Fukunaga, T. Hayakawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | According to the information quantity increase in the high-speed communication network, it is expected TDFA put in practical use in order to expand of the communication bandwidths. The high reliability and optical output of the 1050 nm semiconductor laser which has highly compressively strained InGaAs activated layer as the pumping source are necessary for TDFA. In this paper, we report maximum light-output power over 1000mW and fundamental transverse-mode operation up to 400 mW in 1050 nm highly compressively strained InGaAs single quantum well laser diodes with strain-compensating GaAsP tensile strain barriers. These devices show stable operation over 2500 hours aging test at 50 ℃ under automatic power control of 350 mW. In addition, strain compensated lasers show stable operation even at 1120 nm, which indicates high quality InGaAs active layer is formed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaAs / strain-compensated / Optical fiber-amplifier / 1050nm / TDFA |
| Paper # | LQE2002-98 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/6/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Highly reliable and high-power operation of 1050 nm InGaAs/GaAsP strain-compensated single-quantum-well laser diodes |
| Sub Title (in English) | |
| Keyword(1) | InGaAs |
| Keyword(2) | strain-compensated |
| Keyword(3) | Optical fiber-amplifier |
| Keyword(4) | 1050nm |
| Keyword(5) | TDFA |
| 1st Author's Name | F. Akinaga |
| 1st Author's Affiliation | Miyanodai Technology Development Center, Fuji Photo Film Co., Ltd.() |
| 2nd Author's Name | T. Kuniyasu |
| 2nd Author's Affiliation | Miyanodai Technology Development Center, Fuji Photo Film Co., Ltd. |
| 3rd Author's Name | F. Yamanaka |
| 3rd Author's Affiliation | Miyanodai Technology Development Center, Fuji Photo Film Co., Ltd. |
| 4th Author's Name | K. Matsumoto |
| 4th Author's Affiliation | Miyanodai Technology Development Center, Fuji Photo Film Co., Ltd. |
| 5th Author's Name | T. Fukunaga |
| 5th Author's Affiliation | Miyanodai Technology Development Center, Fuji Photo Film Co., Ltd. |
| 6th Author's Name | T. Hayakawa |
| 6th Author's Affiliation | Miyanodai Technology Development Center, Fuji Photo Film Co., Ltd. |
| Date | 2002/6/28 |
| Paper # | LQE2002-98 |
| Volume (vol) | vol.102 |
| Number (no) | 189 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |