| Presentation | 2002/6/28 GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Hideki YAGI, Kengo MURANUSHI, Takuya SANO, Nobuhiro NUNOYA, Shigeo TAMURA, Shigehisa ARAI, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaInAsP/InP strain-compensated multiple-quantum-wire lasers with the wire widths of 18 nm and 27 nm in the period of 80 nm were fabricated by electron beam lithography, CH_4/H_2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth. Size distributions of these quantum-wire structures were measured by scanning electron microscope and the standard deviation was obtained to be less than ±2 nm, and spontaneous emission spectral widths of these quantum-wire lasers were almost the same as that of the quantum-film laser fabricated from the same initial wafer, hence, good size uniformity of these quantum-wire structures was indicated. In addition, the differential quantum efficiency of these quantum-wire lasers was comparable to that of quantum-film lasers at room temperature, and there was no excess loss caused by the etcbing/regrowth process. These results indicate that this process is very promising for fabrication of ultra fine structures with good size uniformity. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum-Wire Laser / GaInAsP/InP / Strain-Compensated Quantum-Well / CH_4/H_2-RIE / OMVPE Regrowth |
| Paper # | LQE2002-97 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2002/6/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth |
| Sub Title (in English) | |
| Keyword(1) | Quantum-Wire Laser |
| Keyword(2) | GaInAsP/InP |
| Keyword(3) | Strain-Compensated Quantum-Well |
| Keyword(4) | CH_4/H_2-RIE |
| Keyword(5) | OMVPE Regrowth |
| 1st Author's Name | Hideki YAGI |
| 1st Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology() |
| 2nd Author's Name | Kengo MURANUSHI |
| 2nd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 3rd Author's Name | Takuya SANO |
| 3rd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 4th Author's Name | Nobuhiro NUNOYA |
| 4th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 5th Author's Name | Shigeo TAMURA |
| 5th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 6th Author's Name | Shigehisa ARAI |
| 6th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| Date | 2002/6/28 |
| Paper # | LQE2002-97 |
| Volume (vol) | vol.102 |
| Number (no) | 189 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |