Presentation 2002/8/15
Feasibility Study on GaN Intersubband Optical Amplifiers for Ultrafast All-Optical Switching Devices
Nobuo SUZUKI,
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Abstract(in English) An intersubband optical amplifier with a GaN/A1N coupled quantum well structure powered both by current injection and by optical pumping has been proposed as an ultrafast all-optical switch which has the advantages of ultrafast response (~Tb/s) of the intersubband transition in GaN and low switching power of semiconductor optical amplifiers. A rate equation analysis predicted that a signal gain of about 20 dB is achievable at 1-W cw optical pumping, and that ultrafast optical gate operation with an extinction ratio of more than 10 dB will be realized with a control light power of less than 10 dBm, which is two orders of magnitude smaller than that in saturable absorber-type intersubband transition optical switches.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) OTDM / Optical Switches / Optical Amplifiers / Intersubband Transition / GaN / Rate Equation
Paper # OCS2002-51
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Committee OCS
Conference Date 2002/8/15(1days)
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Registration To Optical Communication Systems (OCS)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Feasibility Study on GaN Intersubband Optical Amplifiers for Ultrafast All-Optical Switching Devices
Sub Title (in English)
Keyword(1) OTDM
Keyword(2) Optical Switches
Keyword(3) Optical Amplifiers
Keyword(4) Intersubband Transition
Keyword(5) GaN
Keyword(6) Rate Equation
1st Author's Name Nobuo SUZUKI
1st Author's Affiliation Corporate R&D Center, Toshiba Corp.()
Date 2002/8/15
Paper # OCS2002-51
Volume (vol) vol.102
Number (no) 265
Page pp.pp.-
#Pages 6
Date of Issue