| 講演名 | 2002/6/26 Current and future program of EUVL in Korea , |
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| 抄録(英) | The EUV consortium consisting of Hynix Semiconductor, Samsung Electronics, will contracted with Postech, Hanyang Univ., Pohang Accelerator Laboratory, Korea Electro technology Research Institute to develop the EUVL technology. The first development goals of this consortium will be to establish the key technology modules on the sources and the defect free masks. We present the research results of analysis of multiplayer structure and characterization of defects. Mo/Si multilayers deposited by sputtering process for the application of extreme ultra-violet (EUV) reflector have been characterized. Since the control of d-spacing is critical for higher reflectivity, an effective and accurate d-spacing measurement technology is required. Even though cross-sectional TEM and low-angle XRD are standard methods in evaluating multilayers, they provide different d-spacing values from each other. Cross-sectional TEM images can give us direct measurement of individual layer but cannot describe the optical behavior of the multilayer. On the contrary, low-angle XRD analysis can provide the resultant d-spacing which include the non-ideal factors. As a result, low-angle XRD can predict EUV peak position more precisely compared to the TEM analysis. Results of at-wavelength inspection of EUVL mask substrate defects which were smoothed using multilayer coatings are presented. Programmed mask substrate defects were made with 80nm gold (Au) spheres, which were deposited on the mask substrate before the Mo/Si reflective multilayer coating. After coating, at-wavelength and visible-light inspection of the mask substrates were performed. The smoothing process was found to be effective in significantly suppressing the EUV visibility of the defects. |
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| キーワード(英) | Mulyilayer / At-wavelength / actinic / defect smoothing / EUVL / mask / phase defect / inspection / NGL / Mo/Si / Reflectivity / d-spacing |
| 資料番号 | SDM2002-131 |
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| 研究会 | SDM |
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| 開催期間 | 2002/6/26(から1日開催) |
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| 申込み研究会 | Silicon Device and Materials (SDM) |
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| 本文の言語 | ENG |
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| タイトル（英） | Current and future program of EUVL in Korea |
| サブタイトル（和） | |
| キーワード(1)（和/英） | / Mulyilayer |
| 第 1 著者 氏名（和/英） | / Ohyun Kim |
| 第 1 著者 所属（和/英） | Pohang Univ. of Science and Technology |
| 発表年月日 | 2002/6/26 |
| 資料番号 | SDM2002-131 |
| 巻番号（vol） | vol.102 |
| 号番号（no） | 180 |
| ページ範囲 | pp.- |
| ページ数 | 6 |
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