Presentation	2002/6/26 Semiconductor-Based Magnetic Heterostructures : Tunneling Magnetoresistance in Epitaxial Magnetic Tunnel Junctions Masaaki TANAKA,
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Abstract(in English)	Tunneling magneto resistance (TMR) in magnetic heterostructures is an very important issue for future spin-electronic devices. This paper presents TMR studies on two epitaxial magnetic tunnel junctions (MTJ); GaMnAs/AlAs/GaMnAs ferromagnetic/nonmagnetic semiconductor MTJs, and MnAs/AlAs/MnAs ferromagnetic-metal/semiconductor MTJs, which are both compatible with semiconductor device technology.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Magnetic Heterostructure / Magnetic Tunnel Junction / Tunneling Magnetoresistance / GaMnAs / MnAs
Paper #	SDM2002-122
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Conference Information
Committee	SDM
Conference Date	2002/6/26(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Semiconductor-Based Magnetic Heterostructures : Tunneling Magnetoresistance in Epitaxial Magnetic Tunnel Junctions
Sub Title (in English)
Keyword(1)	Magnetic Heterostructure
Keyword(2)	Magnetic Tunnel Junction
Keyword(3)	Tunneling Magnetoresistance
Keyword(4)	GaMnAs
Keyword(5)	MnAs
1st Author's Name	Masaaki TANAKA
1st Author's Affiliation	Department of Electronic Engineering, The University of Tokyo:Japan Science & Technology Corporation()
Date	2002/6/26
Paper #	SDM2002-122
Volume (vol)	vol.102
Number (no)	180
Page	pp.pp.-
#Pages	6
Date of Issue