Presentation 2005-12-09
1.1μm-range InGaAs VCSEL for optical interconnections
Naofumi SUZUKI, Hiroshi HATAKEYAMA, Takayoshi ANAN, Kimiyoshi FUKATSU, Kenichiro YASHIKI, Masayoshi TSUJI,
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Abstract(in English) Recently, there has been increasing demand for high-speed interconnections, especially for high-end computing systems. Optical interconnection is an attractive way to meet such a demand. A VCSEL is very suitable as a light source for optical interconnection due to its small size, low cost, and low power consumption. We have developed VCSELs based on InGaAs/GaAs-QWs, which are preferable to achieve high speed and high reliability at the same time. Error-free 20-Gbps operations were achieved and no degradation was observed in 70℃, 1000 hours of preliminary APC tests. We also propose VCSELs with type-II tunnel junctions to reduce electrical resistance for higher speed operation.
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Keyword(in English) VCSEL / optical interconnection / InGaAs / tunnel junction
Paper # LQE2005-113
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Conference Information
Committee LQE
Conference Date 2005/12/2(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 1.1μm-range InGaAs VCSEL for optical interconnections
Sub Title (in English)
Keyword(1) VCSEL
Keyword(2) optical interconnection
Keyword(3) InGaAs
Keyword(4) tunnel junction
1st Author's Name Naofumi SUZUKI
1st Author's Affiliation System Device Res. Labs., NEC Corporation()
2nd Author's Name Hiroshi HATAKEYAMA
2nd Author's Affiliation System Device Res. Labs., NEC Corporation
3rd Author's Name Takayoshi ANAN
3rd Author's Affiliation System Device Res. Labs., NEC Corporation
4th Author's Name Kimiyoshi FUKATSU
4th Author's Affiliation System Device Res. Labs., NEC Corporation
5th Author's Name Kenichiro YASHIKI
5th Author's Affiliation System Device Res. Labs., NEC Corporation
6th Author's Name Masayoshi TSUJI
6th Author's Affiliation System Device Res. Labs., NEC Corporation
Date 2005-12-09
Paper # LQE2005-113
Volume (vol) vol.105
Number (no) 455
Page pp.pp.-
#Pages 4
Date of Issue