Presentation 2002/7/12
Fabrication of high critical current density YBCO films and investigation of grain boundary junctions
Kenichi TAKAHASHI, Yohei KAWAGUCHI, Shinya KURIKI, Toshiya OTOWA, Mizushi MATSUDA,
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Abstract(in English) In order to improve the sensitivity of SQUIDs magnetometers made of high-T_c films, we have studied the conditions of pulsed-laser-deposition of YBCO films. Among different deposition parameters examined, extensive degassing of the vacuum chamber before and precise control of the substrate temperature during the film deposition were found effective to obtain high critical temperature T_c and high critical current density J_c. It was also found that the residual resistance ratio has clear correlation with J_c, indicating that it can be a good, and easy to measure, index of the film quality. Those films having T_c ≈ 89-90 K and J_c≧ 5x10^6 A/cm^2 at 77 K were used to fabricate SQUIDs without pickup loop. Grain boundary junctions formed on bicrystal substrates with 30 -misorientation angle exhibited I_cR_n values of more than 100 μV at 77 K. Well-known scaling behavior of the relation of I_cR_n ∝ (J^_c)^<1/2> was confirmed. Modulation voltages of 20-50 μV were obtained in the SQUIDs with 70 pH inductance.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) pulsed-laser-deposition / RRR / critical current density / grain boundary junctions / I_cR_n / SQUID / modulation voltages
Paper # SCE2002-18
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Conference Information
Committee SCE
Conference Date 2002/7/12(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of high critical current density YBCO films and investigation of grain boundary junctions
Sub Title (in English)
Keyword(1) pulsed-laser-deposition
Keyword(2) RRR
Keyword(3) critical current density
Keyword(4) grain boundary junctions
Keyword(5) I_cR_n
Keyword(6) SQUID
Keyword(7) modulation voltages
1st Author's Name Kenichi TAKAHASHI
1st Author's Affiliation Research Institute for Electronic Science, Hokkaido University()
2nd Author's Name Yohei KAWAGUCHI
2nd Author's Affiliation Research Institute for Electronic Science, Hokkaido University
3rd Author's Name Shinya KURIKI
3rd Author's Affiliation Research Institute for Electronic Science, Hokkaido University
4th Author's Name Toshiya OTOWA
4th Author's Affiliation Muroran Institute of Technology
5th Author's Name Mizushi MATSUDA
5th Author's Affiliation Muroran Institute of Technology
Date 2002/7/12
Paper # SCE2002-18
Volume (vol) vol.102
Number (no) 221
Page pp.pp.-
#Pages 6
Date of Issue