| Presentation | 2002/8/15 An Embedded DRAM Technology with SOI/Bulk Hybrid Substrate for High-End SoC Application Takashi YAMADA, Kazumi TAKAHASHI, Hisato OYAMATSU, Hajime NAGANO, Tsutomu SATO, Ichiro MIZUSHIMA, Shinichi NITTA, Takehiko HOJI, Koichi KOKUBUN, Kaori YASUMOTO, Yoshinori MATSUBARA, Takeshi YOSHIDA, Seiji YAMADA, Yoshitaka TSUNASHIMA, Yoshihiko SAITO, Souichi NADAHARA, Yasuhiro KATSUMATA, Makoto YOSHIMI, Hidemi ISHIUCHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A new methodology to form highly accomplished SOI/Bulk hybrid wafers with conventional in-line processes is proposed. Since the SOI/Bulk hybrid wafer has both SOI (Silicon On Insulator) substrate regions and bulk Si substrate regions, bulk devices such as DRAM cells can be embedded with high-performance SOI logic in the wafer. The structure of the hybrid wafer was achieved by etching part of the SOI/BOX (Buried Oxide) layers on SOI wafer and growing Si on the exposed Si base substrate with conventional SEG (Selective Epitaxial Growth) process. The electrical characteristics of DRAMs embedded in the hybrid wafer matched those of DRAMs produced on bulk wafer with 180 nm CMOS process technology. The highly manufacturable SOI embedded DRAM technology is attractive for high-end SoC (System on Chip) solution. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI / DRAM / embedded DRAM / SEG / SoC |
| Paper # | SDM2002-143 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/8/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | An Embedded DRAM Technology with SOI/Bulk Hybrid Substrate for High-End SoC Application |
| Sub Title (in English) | |
| Keyword(1) | SOI |
| Keyword(2) | DRAM |
| Keyword(3) | embedded DRAM |
| Keyword(4) | SEG |
| Keyword(5) | SoC |
| 1st Author's Name | Takashi YAMADA |
| 1st Author's Affiliation | Semiconductor Company, Toshiba Corporation() |
| 2nd Author's Name | Kazumi TAKAHASHI |
| 2nd Author's Affiliation | Toshiba Microelectronics Corporation |
| 3rd Author's Name | Hisato OYAMATSU |
| 3rd Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 4th Author's Name | Hajime NAGANO |
| 4th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 5th Author's Name | Tsutomu SATO |
| 5th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 6th Author's Name | Ichiro MIZUSHIMA |
| 6th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 7th Author's Name | Shinichi NITTA |
| 7th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 8th Author's Name | Takehiko HOJI |
| 8th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 9th Author's Name | Koichi KOKUBUN |
| 9th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 10th Author's Name | Kaori YASUMOTO |
| 10th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 11th Author's Name | Yoshinori MATSUBARA |
| 11th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 12th Author's Name | Takeshi YOSHIDA |
| 12th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 13th Author's Name | Seiji YAMADA |
| 13th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 14th Author's Name | Yoshitaka TSUNASHIMA |
| 14th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 15th Author's Name | Yoshihiko SAITO |
| 15th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 16th Author's Name | Souichi NADAHARA |
| 16th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 17th Author's Name | Yasuhiro KATSUMATA |
| 17th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 18th Author's Name | Makoto YOSHIMI |
| 18th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 19th Author's Name | Hidemi ISHIUCHI |
| 19th Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| Date | 2002/8/15 |
| Paper # | SDM2002-143 |
| Volume (vol) | vol.102 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |