| Presentation | 2002/8/15 Threshold Voltage Control Range in Variable Threshold Voltage Fully-Depleted SOI MOSFETs Toshiharu NAGUMO, Takashi INUKAI, Atsumasa OHSAWA, Toshiro HIRAMOTO, |
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| PDF Download Page | PDF download Page Link | ||
| Abstract(in Japanese) | (See Japanese page) | ||
| Abstract(in English) | The controllable range of the threshold voltage (V_ | ) in fully-depleted SOI MOSFETs is limited by the inversion or accumulation condition of the SOI-buried oxide interface. We studied the film thickness dependence of the control range of V_ | analytically, with introducing a new device parameter γ'. Measured and simulated results of long channel devices were compared, and the origin of discrepancy between analysis and experiment was also discussed qualitatively taking the electron distribution in SOI film into consideration. |
| Keyword(in Japanese) | (See Japanese page) | ||
| Keyword(in English) | body effect / variable threshold voltage CMOS (VTCMOS) / fully-depleted SOI / inversion / accumulation / SOI thickness / g_m-V_g characteristics / carrier distribution | ||
| Paper # | SDM2002-138 | ||
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2002/8/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Threshold Voltage Control Range in Variable Threshold Voltage Fully-Depleted SOI MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | body effect |
| Keyword(2) | variable threshold voltage CMOS (VTCMOS) |
| Keyword(3) | fully-depleted SOI |
| Keyword(4) | inversion |
| Keyword(5) | accumulation |
| Keyword(6) | SOI thickness |
| Keyword(7) | g_m-V_g characteristics |
| Keyword(8) | carrier distribution |
| 1st Author's Name | Toshiharu NAGUMO |
| 1st Author's Affiliation | Institute of Industrial Science, University of Tokyo() |
| 2nd Author's Name | Takashi INUKAI |
| 2nd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| 3rd Author's Name | Atsumasa OHSAWA |
| 3rd Author's Affiliation | Institute of Industrial Science, University of Tokyo:Graduate School of Science and Engineering, Chuo University |
| 4th Author's Name | Toshiro HIRAMOTO |
| 4th Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| Date | 2002/8/15 |
| Paper # | SDM2002-138 |
| Volume (vol) | vol.102 |
| Number (no) | 271 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |