| Presentation | 2002/8/23 Quantitative analysis of surface and interface of SOI by Kelvin-Surface Photovoltage method Daisuke WATANABE, Aimin EN, Seiji NAKAMURA, Michihiko SUHARA, Tsugunoui OKUMURA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Electronic properties of the surface and interface of the SOI wafers as well as the surface of the Si wafers have been characterized by the Kelvin method combined with Surface-Photovoltage (SPV) method. With the use of 340nm UV light source, -0.4[V] of SPV was detected at 1 [mA/cm^2] of the photocurrent density for the 4.5% HF treated p-Si(100) surface. This result indicates that there is anomalously large surface band-bending at the HF-treated p-Si (100) surface. In addition, it is noted that the conductivity type of the p-Si surface region is inverted. On the other hand, very weak SPV with the value of 60[mV] was observed for the HF-treated n-Si(100) surface. These results indicate that the Fermi level position at the surface is pinned in the vicinity of the bottom of the conduction band. Furthermore, the interface recombination rate for the SOI/BOX interface was estimated from the result of the temperature dependence of the contactless I-V characteristics for the SOI wafer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI / Kelvin-Surface Photoveltage method / H-terminated surface / surface band-bending |
| Paper # | ED2002-196 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/8/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Quantitative analysis of surface and interface of SOI by Kelvin-Surface Photovoltage method |
| Sub Title (in English) | |
| Keyword(1) | SOI |
| Keyword(2) | Kelvin-Surface Photoveltage method |
| Keyword(3) | H-terminated surface |
| Keyword(4) | surface band-bending |
| 1st Author's Name | Daisuke WATANABE |
| 1st Author's Affiliation | Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University.() |
| 2nd Author's Name | Aimin EN |
| 2nd Author's Affiliation | Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University. |
| 3rd Author's Name | Seiji NAKAMURA |
| 3rd Author's Affiliation | Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University. |
| 4th Author's Name | Michihiko SUHARA |
| 4th Author's Affiliation | Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University. |
| 5th Author's Name | Tsugunoui OKUMURA |
| 5th Author's Affiliation | Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University. |
| Date | 2002/8/23 |
| Paper # | ED2002-196 |
| Volume (vol) | vol.102 |
| Number (no) | 294 |
| Page | pp.pp.- |
| #Pages | 6 |
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