Presentation 2002/8/23
Fabrication and Estimation of GaInP/GaAs Triple Barrier Resonant Tunneling Diodes
Naoya ASAOKA, Hiroki FUNATO, Michihiko SUHARA, Tsugunori OKUMURA,
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Abstract(in English) We had fabricated GaInP/GaAs triple barrier tunneling diodes. We used PdGe as ohmic contact, and the diameter of etched mesa was 20 μ m φ. We had measured temperature dependence of current-voltage characteristics from 18K up to room temperature, and negative differential resistance was observed below 167K. We had also optimized PdGe anneal condition and characterized the ohmic resistance. We had investigated a possibility of estimating conduction band off-set in the GaInP/GaAs hetrostructure from the experimental results.
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Keyword(in English) GaInP/GaAs hetrostructure / conduction-band gap / triple barrier resonant tunneling diodes
Paper # ED2002-195
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Committee ED
Conference Date 2002/8/23(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication and Estimation of GaInP/GaAs Triple Barrier Resonant Tunneling Diodes
Sub Title (in English)
Keyword(1) GaInP/GaAs hetrostructure
Keyword(2) conduction-band gap
Keyword(3) triple barrier resonant tunneling diodes
1st Author's Name Naoya ASAOKA
1st Author's Affiliation Graduate School of Engineering, Tokyo Metropolitan University()
2nd Author's Name Hiroki FUNATO
2nd Author's Affiliation Graduate School of Engineering, Tokyo Metropolitan University
3rd Author's Name Michihiko SUHARA
3rd Author's Affiliation Graduate School of Engineering, Tokyo Metropolitan University
4th Author's Name Tsugunori OKUMURA
4th Author's Affiliation Graduate School of Engineering, Tokyo Metropolitan University
Date 2002/8/23
Paper # ED2002-195
Volume (vol) vol.102
Number (no) 294
Page pp.pp.-
#Pages 5
Date of Issue