| Presentation | 2002/8/23 Polarization Charge Densities at p-GaN/n-AlGaN Heterojunctions Evaluated by Capacitance-Voltage Characteristics Toshiki Makimoto, Kazuhide Kumakura, Naoki Kobayashi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We propose a new method to evaluate the polarization charge density induced at hetero-interfaces using capacitance-voltage characteristics of p-n heterojunctions and have applied this method to p-GaN/n-AlGaN hetrojunction diodes. Using this method, it is possible to evaluate the negative polarization charge densities for GaN on top of AlGaN heterostructures. Furthermore, this method uses p-n heterojunction structures instead of undoped ones, so the obtained result is less influenced by background impurities or deep levels. The experimental results indicate that the negative polarization charges more than 5x10^<12> cm^<-2> are induced at the GaN/AlGaN hetero-interfaces for the Al mole fractions above 11%. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Polarization charges / Piezoelectric charges / Spontaneous charges / Capacitance-voltage characteristics / Heterojunction / p-GaN/n-AlGaN / Diode |
| Paper # | ED2002-194 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/8/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Polarization Charge Densities at p-GaN/n-AlGaN Heterojunctions Evaluated by Capacitance-Voltage Characteristics |
| Sub Title (in English) | |
| Keyword(1) | Polarization charges |
| Keyword(2) | Piezoelectric charges |
| Keyword(3) | Spontaneous charges |
| Keyword(4) | Capacitance-voltage characteristics |
| Keyword(5) | Heterojunction |
| Keyword(6) | p-GaN/n-AlGaN |
| Keyword(7) | Diode |
| 1st Author's Name | Toshiki Makimoto |
| 1st Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation() |
| 2nd Author's Name | Kazuhide Kumakura |
| 2nd Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
| 3rd Author's Name | Naoki Kobayashi |
| 3rd Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
| Date | 2002/8/23 |
| Paper # | ED2002-194 |
| Volume (vol) | vol.102 |
| Number (no) | 294 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |