| Presentation | 2002/8/23 Characterization of electrical properties of micro-Schottky contacts on ELO GaN Keiichiro KUMADA, Tomohiro MURARA, Yutaka OHNO, Shigeru KISHIMOTO, Koichi MAEZAWA, Takashi MIZUTANI, Nobuhiko SAWAKI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | I-V characteristic of micro-Schottky contacts fabricated on ELO GaN has been measured. The obtained characteristics are classified into two groups; good contacts with small ideality factor and poor ones with large n-value. On the other hand, little scatter are observed in the measurement on n-GaAs. This means that the poor I-V characteristics are not caused by fabrication process or the measurement system. Based on these experiments, it has been concluded that the poor I-V characteristics are due to the crystal defects. The correlation between the poor I-V characteristics and dislocations of GaN has been discussed based on the results of cathode luminescence. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / dislocation / ELO / micro-Schottky contact / I-V characteristics |
| Paper # | ED2002-192 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/8/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of electrical properties of micro-Schottky contacts on ELO GaN |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | dislocation |
| Keyword(3) | ELO |
| Keyword(4) | micro-Schottky contact |
| Keyword(5) | I-V characteristics |
| 1st Author's Name | Keiichiro KUMADA |
| 1st Author's Affiliation | Department of Quantum Engineering, Nagoya University() |
| 2nd Author's Name | Tomohiro MURARA |
| 2nd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 3rd Author's Name | Yutaka OHNO |
| 3rd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 4th Author's Name | Shigeru KISHIMOTO |
| 4th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 5th Author's Name | Koichi MAEZAWA |
| 5th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 6th Author's Name | Takashi MIZUTANI |
| 6th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 7th Author's Name | Nobuhiko SAWAKI |
| 7th Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| Date | 2002/8/23 |
| Paper # | ED2002-192 |
| Volume (vol) | vol.102 |
| Number (no) | 294 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |