| Presentation | 2002/8/23 Evaluation of GaN Crystal Quality by using Sub-micron Schottky Contacts : Correlation between Defects and I-V Characteristics of Low-carrier Density n-GaN Kenji SHIOJIMA, Tetsuya SUEMITSU, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We directly evaluated the effect of dislocations on I-V characteristics of Au/Ni/n-GaN Schottky contacts. A sub-micrometer Schottky dot array was formed by electron beam lithography and I-V measurements were conducted using AFM with a. conductive probe. Neither mixed nor pure edge dislocations affect the I-V characteristics. These results indicate that, in fabricating short-gate FETs, gate Schottky contacts containing dislocations should not be considered a problem with respect to uniformity and reproducibility. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / sub-micron Schottky contact / dislocation / I-V characteristics / AFM |
| Paper # | ED2002-191 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/8/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of GaN Crystal Quality by using Sub-micron Schottky Contacts : Correlation between Defects and I-V Characteristics of Low-carrier Density n-GaN |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | sub-micron Schottky contact |
| Keyword(3) | dislocation |
| Keyword(4) | I-V characteristics |
| Keyword(5) | AFM |
| 1st Author's Name | Kenji SHIOJIMA |
| 1st Author's Affiliation | NTT Photonics Laboratories() |
| 2nd Author's Name | Tetsuya SUEMITSU |
| 2nd Author's Affiliation | NTT Photonics Laboratories |
| Date | 2002/8/23 |
| Paper # | ED2002-191 |
| Volume (vol) | vol.102 |
| Number (no) | 294 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |