| Presentation | 2002/8/23 Characterization and control of GaN and AlGaN Schottky interface properties : Influence of surface oxidization Yuusuke Izumi, Takayuki Sawada, Kazuaki Imai, Naohito Kimura, Seong-Woo Kim, Toshimasa Suzuki, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Influences of GaN surface oxides on interface properties of metal/n-GaN Schottky structures are investigated by comparing I-V-T and C-V characteristics of the structures formed on intentionally oxidized and oxide-etched GaN surfaces. It is found that a thermal oxidation introduces little change of the ideality factor while it leads to a slight reduction of the Schottky barrier height (SBH), for the Ni/n-GaN structure. Slow current drift was below 0.1% within the range of 1-10^4 sec. I-V-T characteristics showed that the inhomogenity of the SBH is comparable with that of the oxide-etched sample. On the other hand, an anodization of GaN surface lead to increase of the SBH up to 0.3 eV, owing to formation of a relatively thick oxide layer. The oxide-etched Au/n-Al_<0.2>Ga_<0.8>N sample with a selectively doped N_D of 10^<18> cm^<-3> order for HEMT structure represented a considerably reduced effective SBH at RT, because of a large leakage current due to the tunneling mechanism. Again, the annealing in N_2 ambient is highly effective to improve characteristics of metalln-AlGaN structures. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN / Shottky barrier height / thermal oxidization / anodic oxidization / I-V-T characteristic / C-V characteristic |
| Paper # | ED2002-190 |
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| Committee | ED |
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| Conference Date | 2002/8/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization and control of GaN and AlGaN Schottky interface properties : Influence of surface oxidization |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | Shottky barrier height |
| Keyword(4) | thermal oxidization |
| Keyword(5) | anodic oxidization |
| Keyword(6) | I-V-T characteristic |
| Keyword(7) | C-V characteristic |
| 1st Author's Name | Yuusuke Izumi |
| 1st Author's Affiliation | Hokkaido Institute of Technology() |
| 2nd Author's Name | Takayuki Sawada |
| 2nd Author's Affiliation | Hokkaido Institute of Technology |
| 3rd Author's Name | Kazuaki Imai |
| 3rd Author's Affiliation | Hokkaido Institute of Technology |
| 4th Author's Name | Naohito Kimura |
| 4th Author's Affiliation | Hokkaido Institute of Technology |
| 5th Author's Name | Seong-Woo Kim |
| 5th Author's Affiliation | Nippon Institute of Technology |
| 6th Author's Name | Toshimasa Suzuki |
| 6th Author's Affiliation | Nippon Institute of Technology |
| Date | 2002/8/23 |
| Paper # | ED2002-190 |
| Volume (vol) | vol.102 |
| Number (no) | 294 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |