| Presentation | 2002/8/23 Enhancement and Accumulation Mode Operation of GaAs MISFETs And InAlAs/InGaAs MISHEMTs with nm-Thin Gate Oxide Layers Masaaki Nasuno, Kazuki Nakamura, Youichi Yamamura, Koichi Iiyama, Saburo Takamiya, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated recessed-gate GaAs MISFETs and InAlAs/InGaAs MISHEMTs by using nm-thin oxidated layers as their gate insulators, which are formed by UV & ozone process, The oxide layer thickness is proportional to square root of the UV & ozone process period and reaches about 10 urn at 480 min. The oxidized layers show leakage current suppression effect and enables operation under forward biased condition exceeding flat-band voltage. A MISFET with I urn gate length showed a transconductance of 50 mS/mm and a current cut off frequency of 6 GHz. The highest transconductances of 250 mS/rrim was obtained with a 1.5 μm gate MISHEMT. Remaining problems are reduced transconductance at around flat-band voltage, and hysteresis of current voltage curves. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | compound semiconductor / GaOx / InAlOx / MISFET / MISHEMT |
| Paper # | ED2002-188 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/8/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Enhancement and Accumulation Mode Operation of GaAs MISFETs And InAlAs/InGaAs MISHEMTs with nm-Thin Gate Oxide Layers |
| Sub Title (in English) | |
| Keyword(1) | compound semiconductor |
| Keyword(2) | GaOx |
| Keyword(3) | InAlOx |
| Keyword(4) | MISFET |
| Keyword(5) | MISHEMT |
| 1st Author's Name | Masaaki Nasuno |
| 1st Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University() |
| 2nd Author's Name | Kazuki Nakamura |
| 2nd Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
| 3rd Author's Name | Youichi Yamamura |
| 3rd Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
| 4th Author's Name | Koichi Iiyama |
| 4th Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
| 5th Author's Name | Saburo Takamiya |
| 5th Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
| Date | 2002/8/23 |
| Paper # | ED2002-188 |
| Volume (vol) | vol.102 |
| Number (no) | 294 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |