| Presentation | 2002/8/23 Structural Characterization of Oxidated, Nitridated, and Oxi-Nitridated (100) GaAs Surface N.C. Paul, T. Inokuma, K. Iiyama, S. Takamiya, K. Higashimine, N. Ohtsuka, Y. Yonezawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Oxidation by UV & ozone process, nitridation by nitrogen helicon plasma process, and a combination of these processes are applied to (100) GaAs wafers. Atomic force microscope, X-ray photoelectron spectroscopy, transmission electron microscope, and photoluminescence were used to characterize influences of these processes on structure and composition of the surfaces. Roughness of oxide/GaAs interface decreases with increase of the oxidation time. 120 min oxidated interface has slightly disordered GaAs portions. Nitridation of a bare surface creates about 2 nm thick strongly disordered layer with a lattice constant larger than the bulk crystal and creates high density defects. Nitridated 8 hrs-oxidized wafer shows a firm amorphous GaON, which contains GaN, layer with nearly atomic flat (terraces and steps) and uniform GaON/GaAs interface, where distortion is hardly observed. Nitridation of bare GaAs surface weakens its photoluminescence intensity. However, nitridation of oxidized surface initially improves the photoluminescence intensity, then deteriorates it by a longer time nitridation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs / Oxidation / Nitridation / Oxi-Nitridation / Interface Structure |
| Paper # | ED2002-186 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/8/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Structural Characterization of Oxidated, Nitridated, and Oxi-Nitridated (100) GaAs Surface |
| Sub Title (in English) | |
| Keyword(1) | GaAs |
| Keyword(2) | Oxidation |
| Keyword(3) | Nitridation |
| Keyword(4) | Oxi-Nitridation |
| Keyword(5) | Interface Structure |
| 1st Author's Name | N.C. Paul |
| 1st Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University() |
| 2nd Author's Name | T. Inokuma |
| 2nd Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
| 3rd Author's Name | K. Iiyama |
| 3rd Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
| 4th Author's Name | S. Takamiya |
| 4th Author's Affiliation | Graduate School of Natural Science and Technology, Kanazawa University |
| 5th Author's Name | K. Higashimine |
| 5th Author's Affiliation | Japan Advanced Institute of Science and Technology, Hokuriku |
| 6th Author's Name | N. Ohtsuka |
| 6th Author's Affiliation | Japan Advanced Institute of Science and Technology, Hokuriku |
| 7th Author's Name | Y. Yonezawa |
| 7th Author's Affiliation | Industrial Research Institute of Ishikawa |
| Date | 2002/8/23 |
| Paper # | ED2002-186 |
| Volume (vol) | vol.102 |
| Number (no) | 294 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |