| Presentation | 2002/8/23 Development of Cu/VN/SiO_2/Si Systems with Thin Nano-Crystalline VN Barrier Mayumi B. TAKEYAMA, Kazumi SATOH, Takaomi ITOI, Masakazu SAKAGAMI, Atsushi NOYA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The thermal stability of the Cu/VNISiO_2/Si system using 10～50 nm thick VN barriers with nano-crystalline grains was examined by XRD, AES, XPS, XTEM, SIMS analyses. The structure of the obtained VN barrier was nano-ciystalline with several nm grains. The nano-crystalline VN barrier provided the excellent barrier properties for the Cu/VN/SiO_2/Si system which realized the thermally stable system without intrinsically structural change of the barrier layer upon annealing regardless of the thickness of the VN barrier. Particularly, the system using a 10 am thick VN barrier tolerated the annealing at 600 ℃ or higher for 1 h without any diffusion. It was revealed that the barrier with nano-crystalline structure was effective on the realization of reliable Cu metallization. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si-ULSI / metallization / Cu interconnects / diffusion barrier / nanocrystalline / VN |
| Paper # | ED2002-185 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/8/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of Cu/VN/SiO_2/Si Systems with Thin Nano-Crystalline VN Barrier |
| Sub Title (in English) | |
| Keyword(1) | Si-ULSI |
| Keyword(2) | metallization |
| Keyword(3) | Cu interconnects |
| Keyword(4) | diffusion barrier |
| Keyword(5) | nanocrystalline |
| Keyword(6) | VN |
| 1st Author's Name | Mayumi B. TAKEYAMA |
| 1st Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitanii Institute of Technology() |
| 2nd Author's Name | Kazumi SATOH |
| 2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitanii Institute of Technology:(Present address)Hitachi Kokusai Electric Inc. |
| 3rd Author's Name | Takaomi ITOI |
| 3rd Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitanii Institute of Technology:(Present address)Chiba University |
| 4th Author's Name | Masakazu SAKAGAMI |
| 4th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitanii Institute of Technology:(Present address)Hitachi Ltd. |
| 5th Author's Name | Atsushi NOYA |
| 5th Author's Affiliation | Dept. of Electrical and Electronic Engineering, Kitanii Institute of Technology |
| Date | 2002/8/23 |
| Paper # | ED2002-185 |
| Volume (vol) | vol.102 |
| Number (no) | 294 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |