Presentation 2002/8/2
High Rate Deposition of ITO thin Films by Facing Target Sputtering at Low Substrate Tempreature
Yoichi HOSHI, Hiroomi KATO,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) It is well known that suppression of the bombardment of high energy particles is necessary to obtain ITO thin films with low resistivity at a low substrate temperature. In facing target sputtering(FTS) method, bombardment of film surfaces by high energy oxygen atoms which are produced from negative oxygen ions emitted from the target surface can be completely suppressed. Therefore, sputtering can be performed at a higher sputtering voltages in the FTS than in magnetron sputtering, which is suitable to realize a high deposition rate in the film preparation. In this study, high rate deposition of ITO thin films at a low substrate temperature was attempted by using the FTS technique. As a result, deposition rate as high as 120 nm/min was easily realized by using FTS. Resistivity of the film depended little on the deposition rate and the films with resistivity below 4×10^<-4>Ωcm were obtained, although surface smoothness of the film was degraded by the increase in the deposition rate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Facing target sputtering / ITO / transparent conductive thin films / high rate deposition / low temperature deposition
Paper # CPM2002-61
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Conference Information
Committee CPM
Conference Date 2002/8/2(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Rate Deposition of ITO thin Films by Facing Target Sputtering at Low Substrate Tempreature
Sub Title (in English)
Keyword(1) Facing target sputtering
Keyword(2) ITO
Keyword(3) transparent conductive thin films
Keyword(4) high rate deposition
Keyword(5) low temperature deposition
1st Author's Name Yoichi HOSHI
1st Author's Affiliation Faculty of Engineering, Tokyo Institute of Polytechnics()
2nd Author's Name Hiroomi KATO
2nd Author's Affiliation Faculty of Engineering, Tokyo Institute of Polytechnics
Date 2002/8/2
Paper # CPM2002-61
Volume (vol) vol.102
Number (no) 261
Page pp.pp.-
#Pages 4
Date of Issue