| Presentation | 2002/8/2 Dependence on the RF power of the characteristics of 3C-SiC on Si(001) grown by triode plasma CVD Kanji YASUI, Masahiro HASHIBA, Tadashi AKAHANE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Epitaxial growth of 3C-SiC on Si(100) was carried out by triode plasma CVD using dimethylsilane as a source gas. The dependence of the film properties such as crystallinity and the generation of stacking faults on the RF power was investigated. Under low substrate temperatures, the crystallinty and the ratio of the domain including stacking faults of SiC were improved at RF power of 60W. On the other hand, those characteristics detenorated by the application of the RF power at 1100℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Triode plasma CVD / 3C-SiC / RF power / Epitaxial growth |
| Paper # | CPM2002-60 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2002/8/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dependence on the RF power of the characteristics of 3C-SiC on Si(001) grown by triode plasma CVD |
| Sub Title (in English) | |
| Keyword(1) | Triode plasma CVD |
| Keyword(2) | 3C-SiC |
| Keyword(3) | RF power |
| Keyword(4) | Epitaxial growth |
| 1st Author's Name | Kanji YASUI |
| 1st Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology() |
| 2nd Author's Name | Masahiro HASHIBA |
| 2nd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| 3rd Author's Name | Tadashi AKAHANE |
| 3rd Author's Affiliation | Department of Electrical Engineering, Nagaoka University of Technology |
| Date | 2002/8/2 |
| Paper # | CPM2002-60 |
| Volume (vol) | vol.102 |
| Number (no) | 261 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |