Presentation 2002/8/1
Effect of CeO_2 annealing on the characteristics of R-Al_2O_3\CeO_2\EuBa_2Cu_3O_<7-δ> thin films
Yoshihiko UENO, Takeo HASHIMOTO, Shinji KIKUCHI, Osamu MICHIKAMI,
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Abstract(in English) We investigated the effects of annealing for a CeO_2 buffer layer on surface morpology, crystallinity and electrical properties of R-Al_2O_3\CeO_2\EuBa_2Cu_3O_<7-δ> thin films. CeO_2 buffer layers 300 Å thick deposited on an R-Al_2O_3 substrate at 650 ℃ by RF magnetron sputtering were annnealed at various temperatures and EuBa_2Cu_3O_<7-δ>(EBCO) thin films were deposited on R-Al_2O_3\CeO_2 at 670 ℃ by DC magnetron sputtering. The surface roughness of CeO_2 buffer layers were improved at annealing temperatures over 700 ℃. Accordingly, the surface roughness of EBCO thin films deposited on the annealed CeO_2 buffer layers were improved. The critical temperature(T_c) was about 90 K regardless of the annealing conditions for the CeO_2 buffer layer. The J_c's of EBCO thin films deposited on the CeO_2 buffer layer annealed at about 800 ℃ were considerably improved compared with that on an as-grown CeO_2 buffer layer and were about 4.5 × 10^6 A/cm^2.
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Keyword(in English) CeO_2 / annealing / critical current density
Paper # CPM2002-55
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Committee CPM
Conference Date 2002/8/1(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effect of CeO_2 annealing on the characteristics of R-Al_2O_3\CeO_2\EuBa_2Cu_3O_<7-δ> thin films
Sub Title (in English)
Keyword(1) CeO_2
Keyword(2) annealing
Keyword(3) critical current density
1st Author's Name Yoshihiko UENO
1st Author's Affiliation Faculty of Engineering, Iwate University()
2nd Author's Name Takeo HASHIMOTO
2nd Author's Affiliation Faculty of Engineering, Iwate University
3rd Author's Name Shinji KIKUCHI
3rd Author's Affiliation Faculty of Engineering, Iwate University
4th Author's Name Osamu MICHIKAMI
4th Author's Affiliation Faculty of Engineering, Iwate University
Date 2002/8/1
Paper # CPM2002-55
Volume (vol) vol.102
Number (no) 260
Page pp.pp.-
#Pages 6
Date of Issue