Presentation	2002/8/1 Effect of deposition rate of CeO_2 buffer layer for R-Al_2O_3＼CeO_2＼EuBa_2C_3O_7 Takeo HASHIMOTO, Shinji KIKUCHI, Osamu MICHIKAMI,
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Abstract(in English)	CeO_2 buffer layers of different thicknesses were prepared on R-plane Al_2O_3 at various deposition rates (Rd) and a growth temperature of 650℃ using RF magnetron sputtering. Epitaxial c-axis EuBa_2Cu_3O_7 (EBCO) thin films 1500 Å thick were deposited on R-Al_2O_3＼CeO_2 at about 650℃ using off-axis DC magnetron sputtering. We investigated surface morphiogy, crystallinity, critical temperature (T_) and critical current dencity of EBCO thin films. T_ and J_c values of the EBCO thin films were measured. The EBCO films showed T_'s of about 88 K regardless of CeO_2 buffer layer deposition conditions. The J_c values at 77.3 K of EBCO thin films on the CeO_2 buffer layers deposited at R_d's of 7.9 A/min and 58.1 Å/min were 3×10^6 A/cm^2 and 5×10^6 A/cm^2, respectively.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	R-Al_2O_3 / EuBa_2Cu_3O_7 / CeO_2 / J_c
Paper #	CPM2002-54
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Conference Information
Committee	CPM
Conference Date	2002/8/1(1days)
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Registration To	Component Parts and Materials (CPM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Effect of deposition rate of CeO_2 buffer layer for R-Al_2O_3＼CeO_2＼EuBa_2C_3O_7
Sub Title (in English)
Keyword(1)	R-Al_2O_3
Keyword(2)	EuBa_2Cu_3O_7
Keyword(3)	CeO_2
Keyword(4)	J_c
1st Author's Name	Takeo HASHIMOTO
1st Author's Affiliation	Faculty of Engineering, Iwate University()
2nd Author's Name	Shinji KIKUCHI
2nd Author's Affiliation	Faculty of Engineering, Iwate University
3rd Author's Name	Osamu MICHIKAMI
3rd Author's Affiliation	Faculty of Engineering, Iwate University
Date	2002/8/1
Paper #	CPM2002-54
Volume (vol)	vol.102
Number (no)	260
Page	pp.pp.-
#Pages	6
Date of Issue