Presentation 2005-12-16
High Performance CMOS Circuit by Using Charge Recycling Actively Body-bias Controlled SOI
Masayuki KITAMURA, Masaaki IIJIMA, Kenji HAMADA, Masahiro NUMA, Hiromi NOTANI, Akira TADA, Sigeto MAEGAWA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this paper, we propose a new technique in order to achieve speed up without increase in leakage current by using actively body-bias controlling technique. Conventional body-bias controlling techniques have some problems, such as very slow bias controlling operation and large area penalty. To solve this problem, we propose a Charge Recycling Actively Body-bias Controlled (CRABC) circuit on SOI which uses the charge kept in pMOS's body for nMOS's body-bias and controls the body voltage in short transition time using simple additional circuit. According to the SPICE simulation, we have confirmed that CRABC shortens delay time by 20% and controls the body voltage within a few clocks.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Active Body-Bias Control / Charge Recycling / PD-SOI / Leakage Current
Paper # ICD2005-198
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Conference Date 2005/12/9(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Performance CMOS Circuit by Using Charge Recycling Actively Body-bias Controlled SOI
Sub Title (in English)
Keyword(1) Active Body-Bias Control
Keyword(2) Charge Recycling
Keyword(3) PD-SOI
Keyword(4) Leakage Current
1st Author's Name Masayuki KITAMURA
1st Author's Affiliation Kobe University()
2nd Author's Name Masaaki IIJIMA
2nd Author's Affiliation Kobe University
3rd Author's Name Kenji HAMADA
3rd Author's Affiliation Kobe University
4th Author's Name Masahiro NUMA
4th Author's Affiliation Kobe University
5th Author's Name Hiromi NOTANI
5th Author's Affiliation Renesas Technology
6th Author's Name Akira TADA
6th Author's Affiliation Renesas Technology
7th Author's Name Sigeto MAEGAWA
7th Author's Affiliation Renesas Technology
Date 2005-12-16
Paper # ICD2005-198
Volume (vol) vol.105
Number (no) 476
Page pp.pp.-
#Pages 6
Date of Issue