Presentation | 2005/12/14 Accurate Small-Signal RF Modeling of FD-SOI MOSFET Bunsei MURAKAMI, GueChol KIM, Takao KIHARA, Masaru GOTO, Toshimasa MATSUOKA, Kenji TANIGUCHI, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A model of FD-SOI MOSFET's RF small-signal characteristics was studied to reproduce measurement results. The proposed model includes delay at channel formation and drain current. It can reproduce two port y-parameter more precisely than a conventional model. Moreover, bias dependance of its parameters was discussed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MOSFET / RF / modeling / FD-SOI / Y-parameter |
Paper # | SDM2005-218 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2005/12/14(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Accurate Small-Signal RF Modeling of FD-SOI MOSFET |
Sub Title (in English) | |
Keyword(1) | MOSFET |
Keyword(2) | RF |
Keyword(3) | modeling |
Keyword(4) | FD-SOI |
Keyword(5) | Y-parameter |
1st Author's Name | Bunsei MURAKAMI |
1st Author's Affiliation | Graduate School of Engineering, Osaka University() |
2nd Author's Name | GueChol KIM |
2nd Author's Affiliation | Graduate School of Engineering, Osaka University |
3rd Author's Name | Takao KIHARA |
3rd Author's Affiliation | Graduate School of Engineering, Osaka University |
4th Author's Name | Masaru GOTO |
4th Author's Affiliation | Graduate School of Engineering, Osaka University |
5th Author's Name | Toshimasa MATSUOKA |
5th Author's Affiliation | Graduate School of Engineering, Osaka University |
6th Author's Name | Kenji TANIGUCHI |
6th Author's Affiliation | Graduate School of Engineering, Osaka University |
Date | 2005/12/14 |
Paper # | SDM2005-218 |
Volume (vol) | vol.105 |
Number (no) | 492 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |