Presentation 2005/12/14
Accurate Small-Signal RF Modeling of FD-SOI MOSFET
Bunsei MURAKAMI, GueChol KIM, Takao KIHARA, Masaru GOTO, Toshimasa MATSUOKA, Kenji TANIGUCHI,
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Abstract(in English) A model of FD-SOI MOSFET's RF small-signal characteristics was studied to reproduce measurement results. The proposed model includes delay at channel formation and drain current. It can reproduce two port y-parameter more precisely than a conventional model. Moreover, bias dependance of its parameters was discussed.
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Keyword(in English) MOSFET / RF / modeling / FD-SOI / Y-parameter
Paper # SDM2005-218
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Conference Information
Committee SDM
Conference Date 2005/12/14(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Accurate Small-Signal RF Modeling of FD-SOI MOSFET
Sub Title (in English)
Keyword(1) MOSFET
Keyword(2) RF
Keyword(3) modeling
Keyword(4) FD-SOI
Keyword(5) Y-parameter
1st Author's Name Bunsei MURAKAMI
1st Author's Affiliation Graduate School of Engineering, Osaka University()
2nd Author's Name GueChol KIM
2nd Author's Affiliation Graduate School of Engineering, Osaka University
3rd Author's Name Takao KIHARA
3rd Author's Affiliation Graduate School of Engineering, Osaka University
4th Author's Name Masaru GOTO
4th Author's Affiliation Graduate School of Engineering, Osaka University
5th Author's Name Toshimasa MATSUOKA
5th Author's Affiliation Graduate School of Engineering, Osaka University
6th Author's Name Kenji TANIGUCHI
6th Author's Affiliation Graduate School of Engineering, Osaka University
Date 2005/12/14
Paper # SDM2005-218
Volume (vol) vol.105
Number (no) 492
Page pp.pp.-
#Pages 5
Date of Issue