Presentation 2005-12-16
Tri-Band GaAs FET Power Amplifiers Using Lumped Elements
Koji UCHIDA, Yoichiro TAKAYAMA, Takayuki FUJITA, Kazusuke MAENAKA,
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Abstract(in English) Tri-band GaAs FET power amplifiers with a single transistor using lumped element matching circuits are designed and fabricated. The dual-band GaAs FET power amplifier[12-14] is applied to the tri-band power amplifier configuration by using PIN diode switching. The matching circuits are designed using the Chebyshev low-pass type impedance transformer design method. We investigated the tri-band GaAs FET power amplifiers with a PIN diode and two PIN diodes configurations. Their superior performance is confirmed by experimental study of tri-band GaAs FET power amplifiers, and it is believed that this circuit configuration method is useful technique for downsizing and high performance of multiband amplifiers.
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Keyword(in English) Tri-band power amplifier / Lumped element / Chebyshev low-pass type impedance transformer / GaAs FET / PIN diode
Paper # MW2005-137
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Committee MW
Conference Date 2005/12/9(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Tri-Band GaAs FET Power Amplifiers Using Lumped Elements
Sub Title (in English)
Keyword(1) Tri-band power amplifier
Keyword(2) Lumped element
Keyword(3) Chebyshev low-pass type impedance transformer
Keyword(4) GaAs FET
Keyword(5) PIN diode
1st Author's Name Koji UCHIDA
1st Author's Affiliation University of Hyogo()
2nd Author's Name Yoichiro TAKAYAMA
2nd Author's Affiliation University of Hyogo
3rd Author's Name Takayuki FUJITA
3rd Author's Affiliation University of Hyogo
4th Author's Name Kazusuke MAENAKA
4th Author's Affiliation University of Hyogo
Date 2005-12-16
Paper # MW2005-137
Volume (vol) vol.105
Number (no) 486
Page pp.pp.-
#Pages 6
Date of Issue