Presentation 2005-12-16
A Dual-Band GaAs FET Oscillator with Common-Drain Configuration
Kenichi ONO, Yoichiro TAKAYAMA, Takayuki FUJITA, Kazusuke MAENAKA,
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Abstract(in English) Dual-band configuration and design method for oscillator using GaAs FET with common-drain configuration are proposed. On common-drain circuit a stub added to gate for peak negative conductance frequency is investigated. 800/1500MHz were chosen dual-band frequencies, and a stub added to gate is set by it. Fundamental circuits which switch a stub added to gate by PIN diode and choose 800/1500MHz are determined. A load circuit is optimized to adjust output power and oscillation frequency, and a dual-band oscillator is fabricated. As a result, this technique's availability is verified.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Common-Drain / Dual-Band / GaAs FET / Oscillator
Paper # MW2005-136
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Committee MW
Conference Date 2005/12/9(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Dual-Band GaAs FET Oscillator with Common-Drain Configuration
Sub Title (in English)
Keyword(1) Common-Drain
Keyword(2) Dual-Band
Keyword(3) GaAs FET
Keyword(4) Oscillator
1st Author's Name Kenichi ONO
1st Author's Affiliation Graduate School of Engineering, University of Hyogo()
2nd Author's Name Yoichiro TAKAYAMA
2nd Author's Affiliation Graduate School of Engineering, University of Hyogo
3rd Author's Name Takayuki FUJITA
3rd Author's Affiliation Graduate School of Engineering, University of Hyogo
4th Author's Name Kazusuke MAENAKA
4th Author's Affiliation Graduate School of Engineering, University of Hyogo
Date 2005-12-16
Paper # MW2005-136
Volume (vol) vol.105
Number (no) 486
Page pp.pp.-
#Pages 6
Date of Issue