Presentation 2005-12-22
Optimization of poly-Si TFT for controlling field emitter arrays
Chiaki Yasumuro, Yuuichi Sakamura, Masayoshi Nagao, Hisao Tanoue, Seigo Kanemaru, Junji Itoh,
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Abstract(in English) We have already proposed thin-film transistor (TFT) controlled field emitter arrays (FEAs) to improve uniformity of field emission display. The important features of the TFT for emission control are high withstand voltage, kink free, and low off leakage current. In this article, the structure of poly-Si TFT was optimized in the view point of controlling field emission current. The multi-gate structure, lightly-doped drain (LDD) structure, and their combination were tested. We found that the channel length should be more than 50μm for kink free characteristics and that the combination of multi-gate and LDD structure is effective for high withstand voltage and low off current. By using this optimized structure, the TFT-controlled FEA was fabricated and successfully operated.
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Keyword(in English) Vacuum nano-electronics / field emission display / field emitter array / poly-Si TFT
Paper # ED2005-186
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Committee ED
Conference Date 2005/12/15(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Optimization of poly-Si TFT for controlling field emitter arrays
Sub Title (in English)
Keyword(1) Vacuum nano-electronics
Keyword(2) field emission display
Keyword(3) field emitter array
Keyword(4) poly-Si TFT
1st Author's Name Chiaki Yasumuro
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)()
2nd Author's Name Yuuichi Sakamura
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Masayoshi Nagao
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Hisao Tanoue
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Seigo Kanemaru
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Junji Itoh
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
Date 2005-12-22
Paper # ED2005-186
Volume (vol) vol.105
Number (no) 498
Page pp.pp.-
#Pages 6
Date of Issue