Presentation 1999/10/22
Grain Size Effect on Luminescent Properties of ZnO:Zn Phosphor Thin Films Prepared by Laser Ablation
A. Ueki, T. Kunimoto, K. Ohmi, S. Tanaka, H. Kobayashi,
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Abstract(in English) It is demonstrated that ZnO:Zn phosphor thin films can be continuously deposited by laser ablation using sintered ZnO:Zn pellets. The grain size of crystal estimated from the full width at half maximum of the (0002) X-ray diffraction peak of the thin film continuously increases with increasing laser shot. Photoluminescence (PL) and cathodoluminescence (CL) of ZnO:Zn thin films were observed. It has been found that the PL intensity strongly depends on the thickness of the thin film. The result also suggests that the reduction of light-emitting region due to the band bending effect takes place in ZnO:Zn thin films as well as that reported for powder phosphors. These thin films show weak CL.
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Keyword(in English) ZnO:Zn Thin Film / Laser Ablation / Grain Size / VFD
Paper # EID99-60
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Committee EID
Conference Date 1999/10/22(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Grain Size Effect on Luminescent Properties of ZnO:Zn Phosphor Thin Films Prepared by Laser Ablation
Sub Title (in English)
Keyword(1) ZnO:Zn Thin Film
Keyword(2) Laser Ablation
Keyword(3) Grain Size
Keyword(4) VFD
1st Author's Name A. Ueki
1st Author's Affiliation Department Electrical and Electronic Engineering Tottori University()
2nd Author's Name T. Kunimoto
2nd Author's Affiliation Department Electrical and Electronic Engineering Tottori University
3rd Author's Name K. Ohmi
3rd Author's Affiliation Department Electrical and Electronic Engineering Tottori University
4th Author's Name S. Tanaka
4th Author's Affiliation Department Electrical and Electronic Engineering Tottori University
5th Author's Name H. Kobayashi
5th Author's Affiliation Department Electrical and Electronic Engineering Tottori University
Date 1999/10/22
Paper # EID99-60
Volume (vol) vol.99
Number (no) 375
Page pp.pp.-
#Pages 4
Date of Issue