| Presentation | 1999/9/28 Electric Characteristics of Gate Dielectrics formed by using an RTA H. Umeda, A. Teramoto, Y. Ohno, A. Shigetomi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed and evaluated gate dielectric films formed in some kinds of gas ambient by using an RTA (Rapid Thermal Annealer). It has been found that dielectric films formed in a hydrogen/oxygen (wet) and an nitrous oxide by using an RTA show higher reliability than those formed by using a conventional furnace. And, it has been found that an oxidation in a dry oxygen ambient under ultraviolet irradiation (UV-O_2 oxidation) by using an RTA, not only show high reliability, but also provide low-temperature processing. It is thought to be important that activated oxidants can reach to Si substrates within there life-time for forming those highly reliable gate dielectric films. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | RTA / wet oxide / N_2O oxynitride / ultraviolet rays / TDDB / activated oxidant |
| Paper # | SDM99-153 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1999/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electric Characteristics of Gate Dielectrics formed by using an RTA |
| Sub Title (in English) | |
| Keyword(1) | RTA |
| Keyword(2) | wet oxide |
| Keyword(3) | N_2O oxynitride |
| Keyword(4) | ultraviolet rays |
| Keyword(5) | TDDB |
| Keyword(6) | activated oxidant |
| 1st Author's Name | H. Umeda |
| 1st Author's Affiliation | Mitsubishi Electric Corporation, ULSI Development Center() |
| 2nd Author's Name | A. Teramoto |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation, ULSI Development Center |
| 3rd Author's Name | Y. Ohno |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation, ULSI Development Center |
| 4th Author's Name | A. Shigetomi |
| 4th Author's Affiliation | Mitsubishi Electric Corporation, ULSI Development Center |
| Date | 1999/9/28 |
| Paper # | SDM99-153 |
| Volume (vol) | vol.99 |
| Number (no) | 340 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |