Presentation | 1999/9/28 Electric Characteristics of Gate Dielectrics formed by using an RTA H. Umeda, A. Teramoto, Y. Ohno, A. Shigetomi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have developed and evaluated gate dielectric films formed in some kinds of gas ambient by using an RTA (Rapid Thermal Annealer). It has been found that dielectric films formed in a hydrogen/oxygen (wet) and an nitrous oxide by using an RTA show higher reliability than those formed by using a conventional furnace. And, it has been found that an oxidation in a dry oxygen ambient under ultraviolet irradiation (UV-O_2 oxidation) by using an RTA, not only show high reliability, but also provide low-temperature processing. It is thought to be important that activated oxidants can reach to Si substrates within there life-time for forming those highly reliable gate dielectric films. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | RTA / wet oxide / N_2O oxynitride / ultraviolet rays / TDDB / activated oxidant |
Paper # | SDM99-153 |
Date of Issue |
Conference Information | |
Committee | SDM |
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Conference Date | 1999/9/28(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electric Characteristics of Gate Dielectrics formed by using an RTA |
Sub Title (in English) | |
Keyword(1) | RTA |
Keyword(2) | wet oxide |
Keyword(3) | N_2O oxynitride |
Keyword(4) | ultraviolet rays |
Keyword(5) | TDDB |
Keyword(6) | activated oxidant |
1st Author's Name | H. Umeda |
1st Author's Affiliation | Mitsubishi Electric Corporation, ULSI Development Center() |
2nd Author's Name | A. Teramoto |
2nd Author's Affiliation | Mitsubishi Electric Corporation, ULSI Development Center |
3rd Author's Name | Y. Ohno |
3rd Author's Affiliation | Mitsubishi Electric Corporation, ULSI Development Center |
4th Author's Name | A. Shigetomi |
4th Author's Affiliation | Mitsubishi Electric Corporation, ULSI Development Center |
Date | 1999/9/28 |
Paper # | SDM99-153 |
Volume (vol) | vol.99 |
Number (no) | 340 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |