Presentation 1999/9/28
Prevention of native oxide growth by storage of silicon wafers in a closed pod and its application to the wafer transport before film depositon
Koichiro Saga, Hitoshi Kuniyasu, Takeshi Hattori,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have developed a mini-environment consisting of a nitrogen-purged wafer-transfer unit and a hermetically sealed aluminum pod which was used for the wafer transport from the wafer-cleaning equipment to film deposition equipments prior to film deposition steps in the process of the cobalt-silicide formation and the hemispherical-grain (HSG) poly-crystalline-silicon formation. As a result, the increase in sheet resistance of cobalt silicide and the decrease in the storage capacitance of electrode using HSG has been successfully prevented by inhibiting the growth of the native oxide on arsenic- or phosphorus-doped silicon surfaces.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Mini-Environment / Closed Pod / Nitrogen / Native Oxide / CoSi_2 / HSG
Paper # SDM99-152
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Committee SDM
Conference Date 1999/9/28(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Prevention of native oxide growth by storage of silicon wafers in a closed pod and its application to the wafer transport before film depositon
Sub Title (in English)
Keyword(1) Mini-Environment
Keyword(2) Closed Pod
Keyword(3) Nitrogen
Keyword(4) Native Oxide
Keyword(5) CoSi_2
Keyword(6) HSG
1st Author's Name Koichiro Saga
1st Author's Affiliation ULSI R&D Laboratories, Sony Corporation()
2nd Author's Name Hitoshi Kuniyasu
2nd Author's Affiliation ULSI R&D Laboratories, Sony Corporation
3rd Author's Name Takeshi Hattori
3rd Author's Affiliation ULSI R&D Laboratories, Sony Corporation
Date 1999/9/28
Paper # SDM99-152
Volume (vol) vol.99
Number (no) 340
Page pp.pp.-
#Pages 6
Date of Issue