Presentation 1999/9/28
Tight-binding Molecular Dynamics Simulation on Silicon Plasma Oxidation
Hitoshi Kurokawa, Aruba Yamada, Akira Endou, Seiichi Takami, Momoji Kubo, Akira Miyamoto,
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Abstract(in English) According to the recently fabricated silicon device technology, the thickness of gate oxide has become only a few nanometers, So the effect of device characteristics resulted from the flatness of SiO_2/Si interface and the bonding state of the transition region can not be neglected. Recently total low-temperature process is taken into account in order to avoid mechanical stress caused by thermal-expansion-coefficient difference of Si, SiO_2 and interconnected metals. Plasma oxidation is a technique being used for growth insulator films on semiconductor surfaces at lower temperature than that used for thermal oxidation. In this study, we performed plasma oxidation simulation using tight-binding molecular dynamics, the oxygen species are emitted over the substrate and the structure of constructed SiO_2 film was discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Tight-binding molecular dynamics / silicon / plasma oxidation
Paper # SDM99-150
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Committee SDM
Conference Date 1999/9/28(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Tight-binding Molecular Dynamics Simulation on Silicon Plasma Oxidation
Sub Title (in English)
Keyword(1) Tight-binding molecular dynamics
Keyword(2) silicon
Keyword(3) plasma oxidation
1st Author's Name Hitoshi Kurokawa
1st Author's Affiliation Graduate School of Engineering, Tohoku University()
2nd Author's Name Aruba Yamada
2nd Author's Affiliation Graduate School of Engineering, Tohoku University
3rd Author's Name Akira Endou
3rd Author's Affiliation Graduate School of Engineering, Tohoku University
4th Author's Name Seiichi Takami
4th Author's Affiliation Graduate School of Engineering, Tohoku University
5th Author's Name Momoji Kubo
5th Author's Affiliation Graduate School of Engineering, Tohoku University
6th Author's Name Akira Miyamoto
6th Author's Affiliation Graduate School of Engineering, Tohoku University
Date 1999/9/28
Paper # SDM99-150
Volume (vol) vol.99
Number (no) 340
Page pp.pp.-
#Pages 6
Date of Issue