Presentation | 1999/9/28 Tight-binding Molecular Dynamics Simulation on Silicon Plasma Oxidation Hitoshi Kurokawa, Aruba Yamada, Akira Endou, Seiichi Takami, Momoji Kubo, Akira Miyamoto, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | According to the recently fabricated silicon device technology, the thickness of gate oxide has become only a few nanometers, So the effect of device characteristics resulted from the flatness of SiO_2/Si interface and the bonding state of the transition region can not be neglected. Recently total low-temperature process is taken into account in order to avoid mechanical stress caused by thermal-expansion-coefficient difference of Si, SiO_2 and interconnected metals. Plasma oxidation is a technique being used for growth insulator films on semiconductor surfaces at lower temperature than that used for thermal oxidation. In this study, we performed plasma oxidation simulation using tight-binding molecular dynamics, the oxygen species are emitted over the substrate and the structure of constructed SiO_2 film was discussed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Tight-binding molecular dynamics / silicon / plasma oxidation |
Paper # | SDM99-150 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1999/9/28(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Tight-binding Molecular Dynamics Simulation on Silicon Plasma Oxidation |
Sub Title (in English) | |
Keyword(1) | Tight-binding molecular dynamics |
Keyword(2) | silicon |
Keyword(3) | plasma oxidation |
1st Author's Name | Hitoshi Kurokawa |
1st Author's Affiliation | Graduate School of Engineering, Tohoku University() |
2nd Author's Name | Aruba Yamada |
2nd Author's Affiliation | Graduate School of Engineering, Tohoku University |
3rd Author's Name | Akira Endou |
3rd Author's Affiliation | Graduate School of Engineering, Tohoku University |
4th Author's Name | Seiichi Takami |
4th Author's Affiliation | Graduate School of Engineering, Tohoku University |
5th Author's Name | Momoji Kubo |
5th Author's Affiliation | Graduate School of Engineering, Tohoku University |
6th Author's Name | Akira Miyamoto |
6th Author's Affiliation | Graduate School of Engineering, Tohoku University |
Date | 1999/9/28 |
Paper # | SDM99-150 |
Volume (vol) | vol.99 |
Number (no) | 340 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |