| Presentation | 1999/9/28 Contribution of radicals and ions in atomic-order plasma nitridation of Si Takuya SEINO, Takashi MATSUURA, Junichi MUROTA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Contribution of radicals and ions to atomic-order nitridation of Si(100) have been investigated using an ultraclean ECR plasma apparatus. The N atom concentration on Si(100) increases with the plasma exposure time and tends to saturate to a value corresponding to a few atomic-layers. In the initial stage, the N atom concentration is normalized by the product of the relative radical density with the nitrogen plasma exposure time and the number of the incident ions is much smaller than the nitridation amount, which means the radical reaction is dominant. Assuming Langmuir-type kinetics neglecting desorption, an excellent agreement is observed by fitting the experimental data. In the saturation region, the N atom concentration is normalized by the number of incident ions and becomes higher than that corresponding to the double atomic-layers. Therefore, it is suggested that nitridation of the deeper atoms below the surface is induced by the ion incidence. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | atomic-order nitridation / Si(100) / nitrogen plasma / radical and ion / Langmuir-type |
| Paper # | SDM99-149 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1999/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Contribution of radicals and ions in atomic-order plasma nitridation of Si |
| Sub Title (in English) | |
| Keyword(1) | atomic-order nitridation |
| Keyword(2) | Si(100) |
| Keyword(3) | nitrogen plasma |
| Keyword(4) | radical and ion |
| Keyword(5) | Langmuir-type |
| 1st Author's Name | Takuya SEINO |
| 1st Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | Takashi MATSUURA |
| 2nd Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University |
| 3rd Author's Name | Junichi MUROTA |
| 3rd Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University |
| Date | 1999/9/28 |
| Paper # | SDM99-149 |
| Volume (vol) | vol.99 |
| Number (no) | 340 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |