| Presentation | 1999/9/28 Boron Doped Silicon Epitaxial Growth Using a Low-Energy Ion Bombardment Process Satoshi Hondo, Hajime Kumami, Wataru Shindo, Tadahiro Ohmi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Boron-doped silicon epitaxy using a low-energy ion bombardment process(<30eV) has been investigated. When an ion bombardment energy become greater than 5eV, carrier concentration decreased drastically. Compared with 13eV ion energy of phosphorus-doped Silicon film, this is extremely small energy. Therefore, an ion bombardment energy should be lower than 5eV in order to make carrier concentration in a boron-doped silicon film 100%. This result will give us a right direction for a semiconductor manufacturing employing a ion bombardment process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon / boron / ion energy / epitaxial growth / deactivation |
| Paper # | SDM99-148 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1999/9/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Boron Doped Silicon Epitaxial Growth Using a Low-Energy Ion Bombardment Process |
| Sub Title (in English) | |
| Keyword(1) | silicon |
| Keyword(2) | boron |
| Keyword(3) | ion energy |
| Keyword(4) | epitaxial growth |
| Keyword(5) | deactivation |
| 1st Author's Name | Satoshi Hondo |
| 1st Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University() |
| 2nd Author's Name | Hajime Kumami |
| 2nd Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
| 3rd Author's Name | Wataru Shindo |
| 3rd Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
| 4th Author's Name | Tadahiro Ohmi |
| 4th Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| Date | 1999/9/28 |
| Paper # | SDM99-148 |
| Volume (vol) | vol.99 |
| Number (no) | 340 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |