Presentation 1999/9/27
Infrared observation of etching process of silicon surface controlling electrode potential
Yasuo Kimura, Yusuke Kondoh, Michio Niwano,
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Abstract(in English) We in-situ investigated etching process of silicon surface applied potential in hydrofluoric acid using infrared spectroscopy in the multiple internal reflection geometry. When low potential was applied, silicon surface was terminated by hydride species and the electrode potential drastically enhanced the etching reaction. At the initial stages of etching, monohydride species was favored and step cites generated but with increase of etching duration dihydride species increased, porous silicon formation took place and the surface of porous silicon was terminated by hydride species. However, hydride species decreased and disappeared when electrode potential was more than about 1V.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) porous silicon / etching / electrochemistry / infrared spectroscopy
Paper # SDM99-143
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Conference Information
Committee SDM
Conference Date 1999/9/27(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Infrared observation of etching process of silicon surface controlling electrode potential
Sub Title (in English)
Keyword(1) porous silicon
Keyword(2) etching
Keyword(3) electrochemistry
Keyword(4) infrared spectroscopy
1st Author's Name Yasuo Kimura
1st Author's Affiliation Research Institute of Electrical Communication, Tohoku University()
2nd Author's Name Yusuke Kondoh
2nd Author's Affiliation Research Institute of Electrical Communication, Tohoku University
3rd Author's Name Michio Niwano
3rd Author's Affiliation Research Institute of Electrical Communication, Tohoku University
Date 1999/9/27
Paper # SDM99-143
Volume (vol) vol.99
Number (no) 339
Page pp.pp.-
#Pages 5
Date of Issue