| Presentation | 1999/9/27 Atomic-layer adsorption of P on Si(100) and Ge(100) by PH_3 using an ultraclean LPCVD Yosuke SHIMAMUNE, Masao SAKURABA, Takashi MATSUURA, Junichi MUROTA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Atomic-layer adsorption of P on Si(100) and Ge(100) at 200-750℃ by PH_3 was investigated using an ultraclean low-pressure chemical vapor deposition system. At 300℃, the PH_3 adsorption was suppressed on the H-terminated Si surface, but PH_3 was adsorbed dissociatively on the H-free Si surface with saturation tendency to sub atomic-layer. At 450-750℃, the P atom concentration on the Si surface tended to saturate to about two or three atomic-layers by exposing PH_3 with little influence of the carrier gas (H_2 or He). When the P-adsorbed Si was kept in Ar and in H_2 at 650℃ after PH_3 exposure, the P atom concentration decreased to about one atomic-layer by thermal desorption and also by reduction due to hydrogen. On the Ge surface, PH_3 adsorption was suppressed by H-termination at 200℃, P atom concentration saturated to the single atomic-layer at 300-450℃. Furthermore, P desorption from the Ge surface at 450℃ occurred much faster than that from the Si surface at 650℃, while P bonded to Ge was stable at 300℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | PH_3 / surface adsorption / Si(100) / Ge(100) / CVD |
| Paper # | SDM99-141 |
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| Committee | SDM |
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| Conference Date | 1999/9/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Atomic-layer adsorption of P on Si(100) and Ge(100) by PH_3 using an ultraclean LPCVD |
| Sub Title (in English) | |
| Keyword(1) | PH_3 |
| Keyword(2) | surface adsorption |
| Keyword(3) | Si(100) |
| Keyword(4) | Ge(100) |
| Keyword(5) | CVD |
| 1st Author's Name | Yosuke SHIMAMUNE |
| 1st Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University.() |
| 2nd Author's Name | Masao SAKURABA |
| 2nd Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University. |
| 3rd Author's Name | Takashi MATSUURA |
| 3rd Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University. |
| 4th Author's Name | Junichi MUROTA |
| 4th Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University. |
| Date | 1999/9/27 |
| Paper # | SDM99-141 |
| Volume (vol) | vol.99 |
| Number (no) | 339 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |