| Presentation | 1999/9/27 Initial Reaction in Low-Temperature Selective Growth of W on the Si Surface Using WF_6 and SiH_4 Gases Yuji Yamamoto, Takashi Matsuura, Junichi Murota, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Selective growth of W on the Si(100) surface at ∼100℃ in a WF_6 and SiH_4 mixture was investigated using a cold-wall low-pressure CVD system. It is found that W grows by preheating the wet-cleaned substrate before the growth and the incubation period of the film growth becomes shorter on the Si surface of a lower hydrogen concentration. W nucleus formation before the film growth is also enhanced and the nuclei on the Si surface of a lower hydrogen concentration are of a higher density and a smaller size. Even before the nucleus formation, the W atom is adsorbed and the adsorption rate on the Si surface of a lower hydrogen-termination is higher than that of a higher one. Consequently, hydrogen desorption from the Si surface enhances the W atom adsorption, and after adsorption of a certain concentration of W atoms, the W nucleus formation and growth start. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CVD / W / Selective Growth / WF_6 / SiH_4 / Incubation Period |
| Paper # | SDM99-140 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1999/9/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Initial Reaction in Low-Temperature Selective Growth of W on the Si Surface Using WF_6 and SiH_4 Gases |
| Sub Title (in English) | |
| Keyword(1) | CVD |
| Keyword(2) | W |
| Keyword(3) | Selective Growth |
| Keyword(4) | WF_6 |
| Keyword(5) | SiH_4 |
| Keyword(6) | Incubation Period |
| 1st Author's Name | Yuji Yamamoto |
| 1st Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | Takashi Matsuura |
| 2nd Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University |
| 3rd Author's Name | Junichi Murota |
| 3rd Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University |
| Date | 1999/9/27 |
| Paper # | SDM99-140 |
| Volume (vol) | vol.99 |
| Number (no) | 339 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |