Presentation 1999/11/18
A CW 4 Watt Ka-Band Power Amplifier Utilizing MMIC Multi-Chip Technology
K. Matsunaga, I. Miura, N. Iwata,
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Abstract(in English) This paper describes design consideration and performances of a Ka-band power amplifier. The amplifier utilizes four fully-matched MMICs, in which 0.35μm-long gate GaAs-based heterojunction FETs are employed. The developed power MMIC amplifier delivered an output power of 1.0W at 28GHz. Same matching circuits with easy configuration are applicable for both input and output matching circuits by combining four fully-matched MMICs. The power amplifier demonstrated an output power of 3.0W and a power-added efficiency of 20.5%. The highest output power of 4.5W was achieved. The developed power amplifier also provides the highest CW output power of 3.0W over the bandwidth of 2GHz at Ka-band.
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Keyword(in English) Quasi-millimeter-wave / Ka-band / power amplifier / MMIC / distributed
Paper # MW99-144
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Committee MW
Conference Date 1999/11/18(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A CW 4 Watt Ka-Band Power Amplifier Utilizing MMIC Multi-Chip Technology
Sub Title (in English)
Keyword(1) Quasi-millimeter-wave
Keyword(2) Ka-band
Keyword(3) power amplifier
Keyword(4) MMIC
Keyword(5) distributed
1st Author's Name K. Matsunaga
1st Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporation.()
2nd Author's Name I. Miura
2nd Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporation.
3rd Author's Name N. Iwata
3rd Author's Affiliation Kansai Electronics Research Laboratories, NEC Corporation.
Date 1999/11/18
Paper # MW99-144
Volume (vol) vol.99
Number (no) 442
Page pp.pp.-
#Pages 7
Date of Issue