Presentation 1999/11/18
A LATERAL P-SI-N DIODE SPDT SWITCH FOR Ka-BAND APPLICATIONS
Junko Saato-Iwanaga, Mitsuru Tanabe, Kazuo Miyatsuji, Daisuke Ueda,
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Abstract(in English) We report on lateral GaAs P-Semi-Insulator-N diode switches. The single P-Semi-Insulator-N structure showed the insertion loss of as low as 0.66 dB and the implemented SPDT switch that comprised the diodes exhibited the insertion loss of as low as l.8 dB and isolation of 35 dB at 30 GHz. The proposed P-Semi-Insulator-N structure was easily formed by ion-implant technique and makes it possible to integrate with any active devices.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Mm wave / PIN diode / switch / SPDT / LMDS
Paper # MW99-143
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Committee MW
Conference Date 1999/11/18(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A LATERAL P-SI-N DIODE SPDT SWITCH FOR Ka-BAND APPLICATIONS
Sub Title (in English)
Keyword(1) Mm wave
Keyword(2) PIN diode
Keyword(3) switch
Keyword(4) SPDT
Keyword(5) LMDS
1st Author's Name Junko Saato-Iwanaga
1st Author's Affiliation Semiconductor Device Research Center, Semiconductor Company, Matsushita Electronics Corporation()
2nd Author's Name Mitsuru Tanabe
2nd Author's Affiliation Semiconductor Device Research Center, Semiconductor Company, Matsushita Electronics Corporation
3rd Author's Name Kazuo Miyatsuji
3rd Author's Affiliation Semiconductor Device Research Center, Semiconductor Company, Matsushita Electronics Corporation
4th Author's Name Daisuke Ueda
4th Author's Affiliation Semiconductor Device Research Center, Semiconductor Company, Matsushita Electronics Corporation
Date 1999/11/18
Paper # MW99-143
Volume (vol) vol.99
Number (no) 442
Page pp.pp.-
#Pages 5
Date of Issue