Presentation 1999/11/18
Ku-band Si MOSFET Amplifiers with On-chip Matching Networks
Hitoshi Yano, Yasushi Nakahara, Tomohisa Hirayama, Noriaki Matsuno, Yasuyuki Suzuki, Akio Furukawa,
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Abstract(in English) We have demonstrated Ku-band (12-20 GHz) Si MOSFET monolithic amplifiers with on-chip matching networks. In these amplifiers, we used 3-μm-thick Al-metal transmission lines on 5.6-μm-thick polyimide/SiON isolation layers for the matching networks. The single gate MOSFET amplifier showed a gain of 7.5-5 dB and a noise figure of 3.5-3.8 dB at about 12-19 GHz. The bandwidth was as high as 20GHz, which is close to f_/2 of the MOSFETs. Therefore, the on-chip matching networks could provide high performance up to the Ku-band.
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Keyword(in English) Si MOSFET / CMOS LSI / Ku-band / Amplifiers / MMIC / On-chip matching / Low-Noise
Paper # ED99-216
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Committee ED
Conference Date 1999/11/18(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Ku-band Si MOSFET Amplifiers with On-chip Matching Networks
Sub Title (in English)
Keyword(1) Si MOSFET
Keyword(2) CMOS LSI
Keyword(3) Ku-band
Keyword(4) Amplifiers
Keyword(5) MMIC
Keyword(6) On-chip matching
Keyword(7) Low-Noise
1st Author's Name Hitoshi Yano
1st Author's Affiliation NEC Corporation Optelectronics and High Frequency Device Research Laboratories()
2nd Author's Name Yasushi Nakahara
2nd Author's Affiliation Silicon Systems Research Laboratories
3rd Author's Name Tomohisa Hirayama
3rd Author's Affiliation NEC Corporation Optelectronics and High Frequency Device Research Laboratories
4th Author's Name Noriaki Matsuno
4th Author's Affiliation NEC Corporation Optelectronics and High Frequency Device Research Laboratories
5th Author's Name Yasuyuki Suzuki
5th Author's Affiliation NEC Corporation Optelectronics and High Frequency Device Research Laboratories
6th Author's Name Akio Furukawa
6th Author's Affiliation NEC Corporation Optelectronics and High Frequency Device Research Laboratories
Date 1999/11/18
Paper # ED99-216
Volume (vol) vol.99
Number (no) 440
Page pp.pp.-
#Pages 8
Date of Issue