Presentation 1999/11/18
High Efficiency PA MMIC for Sub-millimeterwave Applications
Tomio SATOH, A. Betti-Berutto, Junichiro NIKAIDO, Eizo MITANI, Shigeru KURODA,
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Abstract(in English) High efficiency, high power MMIC has been developed for sub-millimeterwave applications. As a trasistor, we used power pHEMT which has AlGaAs/InGaASs/AlGaAs double hetero structure. This power pHEMT showed a 68% power added efficiency with 23.5dBm output power at 18GHz. We also developed K-Band power MMIC using this power pHEMT. This MMIC showed very good performance which power added efficiency is greater than 40% at 1dB gain compression point with over 31dBm P1dB and over 15dB G1dB in the frequency range from 18 to 20 GHz.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Sub-millimeterwave / High Efficiency / High Power / Power pHEMT / Power MMIC
Paper # ED99-213
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Committee ED
Conference Date 1999/11/18(1days)
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Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Efficiency PA MMIC for Sub-millimeterwave Applications
Sub Title (in English)
Keyword(1) Sub-millimeterwave
Keyword(2) High Efficiency
Keyword(3) High Power
Keyword(4) Power pHEMT
Keyword(5) Power MMIC
1st Author's Name Tomio SATOH
1st Author's Affiliation Fujitsu Quantum Devices Ltd.()
2nd Author's Name A. Betti-Berutto
2nd Author's Affiliation Fujitsu Compound Semiconductor Inc.
3rd Author's Name Junichiro NIKAIDO
3rd Author's Affiliation Fujitsu Quantum Devices Ltd.
4th Author's Name Eizo MITANI
4th Author's Affiliation Fujitsu Quantum Devices Ltd.
5th Author's Name Shigeru KURODA
5th Author's Affiliation Fujitsu Quantum Devices Ltd.
Date 1999/11/18
Paper # ED99-213
Volume (vol) vol.99
Number (no) 440
Page pp.pp.-
#Pages 6
Date of Issue