| Presentation | 1999/10/22 Characteristics of recessed gate AlGaN/GaN MODFETs on sapphire Takashi EGAWA, Hiroyasu ISHIKAWA, Guang Yuan Zhao, Takashi JIMBO, Masayoshi UMENO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Two-dimensional electron gas (2DEG) mobility and sheet carrier density of AlGaN/GaN heterostructure on sapphire were 740 cm^2/V・s and 5.1×x10^<12> cm^<-2> at 300 K, and 12000 cm^2/V・s and 2.8×10^<12> cm^<-2> at 8.9 K, respectively. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length of 2.1 μm at 25 ℃. At an elevated temperature of 350 ℃, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively. The AlGaN/GaN MODFET exhibited the stable operation with good pinch-off characteristics at high temperatures, and the very weak temperature dependence of the threshold voltage. The drain current collapse was not observed in the dark and AC measurement. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN MODFET / 2DEG / high-temperature characteristic / current collapse |
| Paper # | ED99-207 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/10/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characteristics of recessed gate AlGaN/GaN MODFETs on sapphire |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN MODFET |
| Keyword(2) | 2DEG |
| Keyword(3) | high-temperature characteristic |
| Keyword(4) | current collapse |
| 1st Author's Name | Takashi EGAWA |
| 1st Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology() |
| 2nd Author's Name | Hiroyasu ISHIKAWA |
| 2nd Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 3rd Author's Name | Guang Yuan Zhao |
| 3rd Author's Affiliation | Venture Business Laboratory, Nagoya Institute of Technology |
| 4th Author's Name | Takashi JIMBO |
| 4th Author's Affiliation | Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology |
| 5th Author's Name | Masayoshi UMENO |
| 5th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology:Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
| Date | 1999/10/22 |
| Paper # | ED99-207 |
| Volume (vol) | vol.99 |
| Number (no) | 377 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |