| Presentation | 1999/10/22 Electrical Properties and I-V Characteristics in GaN-related Heterostructure FETs Narihiko Maeda, Tadashi Saitoh, Kotaro Tsubaki, Toshio Nishida, Naoki Kobayashi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Electrical properties and I-V characteristics in AlGaN/GaN single-heterostructure and AlGaN/(In)GaN/AlGaN double-heterostructure FETs have been reported. A guideline for obtaining high two-dimensional electron densities in AlGaN/GaN single-heterostructure FETs has been shown, and high-temperature device performances with superior pinch-off characteristics have been reported. A drastic enhancement in the two-dimensional electron mobility has been observed in AlGaN/(In)GaN/AlGaN double-heterostructure FETs, which is characteristics of nitride heterostructures. A 0.4-μm-gate-length GaN double-heterostructure FET has exhibited I-V characteristics with excellent current saturation and pinch-off characteristics whose maximum transconductance has been estimated to be as high as 180mS/mm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | III-V Nitrides / Heterostructure / High-temperature and High-power FET / Two-dimensional electron |
| Paper # | CPM99-119 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/10/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Properties and I-V Characteristics in GaN-related Heterostructure FETs |
| Sub Title (in English) | |
| Keyword(1) | III-V Nitrides |
| Keyword(2) | Heterostructure |
| Keyword(3) | High-temperature and High-power FET |
| Keyword(4) | Two-dimensional electron |
| 1st Author's Name | Narihiko Maeda |
| 1st Author's Affiliation | NTT Basic Research Laboratories, Physical Science Laboratory() |
| 2nd Author's Name | Tadashi Saitoh |
| 2nd Author's Affiliation | NTT Basic Research Laboratories, Physical Science Laboratory |
| 3rd Author's Name | Kotaro Tsubaki |
| 3rd Author's Affiliation | NTT Basic Research Laboratories, Physical Science Laboratory |
| 4th Author's Name | Toshio Nishida |
| 4th Author's Affiliation | NTT Basic Research Laboratories, Physical Science Laboratory |
| 5th Author's Name | Naoki Kobayashi |
| 5th Author's Affiliation | NTT Basic Research Laboratories, Physical Science Laboratory |
| Date | 1999/10/22 |
| Paper # | CPM99-119 |
| Volume (vol) | vol.99 |
| Number (no) | 379 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |