| Presentation | 1999/10/22 Ti/Al Ohmic Contact to n-type AlGaN/GaN Structure with Low Temperature Annealing Kensuke Kasahara, Chiaki Sasaoka, Kazuaki Kunihiro, Yuji Takahashi, Yasuo Ohno, Tatsuo Nakayama, Hironobu Miyamoto, Yuji Ando, Masaaki Kuzuhara, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated the resistivity of Ti/Al contact to n-AlGaN/GaN heterostructures or n-GaN changing the annealing temperature and the Al-fraction. A low resistivity of 1×10^<-7>Ωcm^2 was obtained at 650℃ and for 30 seconds annealing in nitrogen atmosphere with 10nm Ti and 200nm Al structure for 10^<19>cm^<-3> doped n-AlGaN/GaN. For low temperature annealing at around 600℃, low contact resistances were obtained with higher Al content together with a high donor-concentration in the surface layer. For high temperature annealing at 950℃, on the other hand, contact resistances fall into relatively low resistances of around 10^<-5>Ωcm^2, regardless of Al fraction and of surface donor concentrations, but are limited to this value. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nitride Semiconductors / Ohmic Contact / Schottky Barrier Height / Power FET |
| Paper # | CPM99-117 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/10/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ti/Al Ohmic Contact to n-type AlGaN/GaN Structure with Low Temperature Annealing |
| Sub Title (in English) | |
| Keyword(1) | Nitride Semiconductors |
| Keyword(2) | Ohmic Contact |
| Keyword(3) | Schottky Barrier Height |
| Keyword(4) | Power FET |
| 1st Author's Name | Kensuke Kasahara |
| 1st Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Chiaki Sasaoka |
| 2nd Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
| 3rd Author's Name | Kazuaki Kunihiro |
| 3rd Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
| 4th Author's Name | Yuji Takahashi |
| 4th Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
| 5th Author's Name | Yasuo Ohno |
| 5th Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
| 6th Author's Name | Tatsuo Nakayama |
| 6th Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
| 7th Author's Name | Hironobu Miyamoto |
| 7th Author's Affiliation | Kansai Electronics Research Laboratory NEC Corporation |
| 8th Author's Name | Yuji Ando |
| 8th Author's Affiliation | Kansai Electronics Research Laboratory NEC Corporation |
| 9th Author's Name | Masaaki Kuzuhara |
| 9th Author's Affiliation | Kansai Electronics Research Laboratory NEC Corporation |
| Date | 1999/10/22 |
| Paper # | CPM99-117 |
| Volume (vol) | vol.99 |
| Number (no) | 379 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |