| Presentation | 1999/10/22 The characteristics of Pd ohmic electrode on p-type GaN K. TAKATANI, T. OHNO, S. ITO, S. OHMI, M. ISHIDA, T. OKUMURA, M. TANEYA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The electric characteristics and the aptitude in device use of Pd ohmic electrode for p-type GaN are reported. Because p-type GaN used for p-type contact of GaN light emitting devices has an extremely large work function and the Schottky barrier tends to be formed easily, it is difficult to lower sufficiently the specific contact resistance of the conventional Ni/Au electrode on p-type GaN. Pd electrode makes it possible to moderate the effect of Schottky barrier with its reactivity to GaN and to achieve the lower specific contact resistance than that of the Ni/Au electorode. Furthermore, this electrode is superior to Ni/Au electrode in elapse deterioration with current injection as well. Thus, we expect Pd as the promising ohmic electrode with low resistance for p-type GaN. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | p-type GaN / Ohmic electrode / Schottky barrier / specific contact resistance / Pd / elapse deterioration |
| Paper # | CPM99-116 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/10/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The characteristics of Pd ohmic electrode on p-type GaN |
| Sub Title (in English) | |
| Keyword(1) | p-type GaN |
| Keyword(2) | Ohmic electrode |
| Keyword(3) | Schottky barrier |
| Keyword(4) | specific contact resistance |
| Keyword(5) | Pd |
| Keyword(6) | elapse deterioration |
| 1st Author's Name | K. TAKATANI |
| 1st Author's Affiliation | Advanced Technology Research Laboratories, Corporate R&D Group, SHARP Corporation() |
| 2nd Author's Name | T. OHNO |
| 2nd Author's Affiliation | Advanced Technology Research Laboratories, Corporate R&D Group, SHARP Corporation |
| 3rd Author's Name | S. ITO |
| 3rd Author's Affiliation | Advanced Technology Research Laboratories, Corporate R&D Group, SHARP Corporation |
| 4th Author's Name | S. OHMI |
| 4th Author's Affiliation | Advanced Technology Research Laboratories, Corporate R&D Group, SHARP Corporation |
| 5th Author's Name | M. ISHIDA |
| 5th Author's Affiliation | Advanced Technology Research Laboratories, Corporate R&D Group, SHARP Corporation |
| 6th Author's Name | T. OKUMURA |
| 6th Author's Affiliation | Advanced Technology Research Laboratories, Corporate R&D Group, SHARP Corporation |
| 7th Author's Name | M. TANEYA |
| 7th Author's Affiliation | Advanced Technology Research Laboratories, Corporate R&D Group, SHARP Corporation |
| Date | 1999/10/22 |
| Paper # | CPM99-116 |
| Volume (vol) | vol.99 |
| Number (no) | 379 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |