| Presentation | 1999/10/22 Intersuband transition in AlGaN/GaN multiple quantum wells Norio Iizuka, Kei Kaneko, Nobuo Suzuki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | There is large lattice strain in AlGaN/GaN multiple quantum wells (MQWs). We investigate how the strain affects the crystalline quality, interband luminescence properties and intersubband transition (ISBT). The lattice strain produces the internal field, of which magnitude is determined by the ratio of the well and the barrier. Due to the field, ISBT wavelength does not correspond to the interband luminescence wavelength. When the barriers are thick, the strain energy increases and the lattice is partly relaxed. By setting the barrires thinner, we grew MQWs which consist of as many as 200 wells and barriers with Al content of 0.65 and we grew MQWs with Al content of as high as 0.85. We successfully observed the intersubband absorptions for both samples. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | intersubband transition / nitride semiconductor / piezoelectric effect / optical switch / ATR / Brewster angle |
| Paper # | CPM99-115 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/10/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Intersuband transition in AlGaN/GaN multiple quantum wells |
| Sub Title (in English) | |
| Keyword(1) | intersubband transition |
| Keyword(2) | nitride semiconductor |
| Keyword(3) | piezoelectric effect |
| Keyword(4) | optical switch |
| Keyword(5) | ATR |
| Keyword(6) | Brewster angle |
| 1st Author's Name | Norio Iizuka |
| 1st Author's Affiliation | Corporate Research and Development Center, Toshiba() |
| 2nd Author's Name | Kei Kaneko |
| 2nd Author's Affiliation | Corporate Research and Development Center, Toshiba |
| 3rd Author's Name | Nobuo Suzuki |
| 3rd Author's Affiliation | Corporate Research and Development Center, Toshiba |
| Date | 1999/10/22 |
| Paper # | CPM99-115 |
| Volume (vol) | vol.99 |
| Number (no) | 379 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |