| Presentation | 1999/10/22 Growth of GaN by MBE and Study on Excited Nitrogen Species Yasuo Chiba, Tsutomu Araki, Yasushi Nanishi, Nobuaki Teraguchi, Akira Suzuki, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated the GaN growth by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE) using hydrogen-nitrogen mixed gas plasma. By addition of hydrogen to nitrogen plasma, growth rate of GaN was drastically increased. From the analyses of optical emission spectroscopy and quadrupole mass spectroscopy, NH_x families were generated in the mix gas plasma, which contributed to the increase of growth rate. The structural characterization of GaN layers was observed by scanning electron microscope (SEM) and transmission electron microscope (TEM). The GaN layers grown with hydrogen showed three dimensional columnar structures. Taking into account the existences of Ga- and N-polarity regions, the growth mechanism of the columnar structure in the GaN layer grown with hydrogen is proposed. In order to verify this mechanism, we have carried out the GaN growth with hydrogen on sapphire after the growth of GaN layer by ECR-MBE (GaN template). The growth rate of GaN layer on GaN template with N-polarity was decreased by addition of hydrogen to nitrogen plasma. No columnar structure of GaN was appeared from the observation of TEM. It was considered that the growth mode of GaN with hydrogen was strongly influenced by the polarity of the GaN surface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / ECR-MBE / hydrogen / columnar structure / polarity / SEM / TEM |
| Paper # | CPM99-114 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1999/10/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of GaN by MBE and Study on Excited Nitrogen Species |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | ECR-MBE |
| Keyword(3) | hydrogen |
| Keyword(4) | columnar structure |
| Keyword(5) | polarity |
| Keyword(6) | SEM |
| Keyword(7) | TEM |
| 1st Author's Name | Yasuo Chiba |
| 1st Author's Affiliation | Department of Photonics, Ritsumeikan University() |
| 2nd Author's Name | Tsutomu Araki |
| 2nd Author's Affiliation | Department of Photonics, Ritsumeikan University |
| 3rd Author's Name | Yasushi Nanishi |
| 3rd Author's Affiliation | Department of Photonics, Ritsumeikan University |
| 4th Author's Name | Nobuaki Teraguchi |
| 4th Author's Affiliation | Advanced Technology Research Lab., Sharp Co. |
| 5th Author's Name | Akira Suzuki |
| 5th Author's Affiliation | Advanced Technology Research Lab., Sharp Co. |
| Date | 1999/10/22 |
| Paper # | CPM99-114 |
| Volume (vol) | vol.99 |
| Number (no) | 379 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |