Presentation	1999/10/22 Atomic force microscopy and transmission electron microscopy observations of KOH-etched GaN surfaces Kenji Shiojima,
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Abstract(in English)	Clear results on the origin of etch pits are reported. The surfaces of high-quality GaN epitaxial layers were etched with molten KOH and observed by atomic force microscopy (AFM) and plan-view and cross-sectional transmission electron microscopy (TEM). AFM images for as-grown samples show dark spots indicating mixed dislocations. For etched samples, hexagonal-base etch pits were clearly observed, and the dark spots disappeared. TEM observations show that a mixed dislocation terminates at the bottom of each etch pit. The densities of etch pits and mixed dislocations are almost the same, i.e., around 3x10^8cm^<-2>. The origin of etch pits is the mixed dislocation, and combining KOH etching and AFM is found to be a better approach for two-dimensional evaluation of mixed dislocations.
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Keyword(in English)	GaN / AFM / TEM / KOH etching / dislocation / etch pit
Paper #	CPM99-113
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Conference Information
Committee	CPM
Conference Date	1999/10/22(1days)
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Paper Information
Registration To	Component Parts and Materials (CPM)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Atomic force microscopy and transmission electron microscopy observations of KOH-etched GaN surfaces
Sub Title (in English)
Keyword(1)	GaN
Keyword(2)	AFM
Keyword(3)	TEM
Keyword(4)	KOH etching
Keyword(5)	dislocation
Keyword(6)	etch pit
1st Author's Name	Kenji Shiojima
1st Author's Affiliation	NTT Photonics Laboratories()
Date	1999/10/22
Paper #	CPM99-113
Volume (vol)	vol.99
Number (no)	379
Page	pp.pp.-
#Pages	6
Date of Issue